A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is −0.45 or less.

Floor finish removal pad assemblies are described. Methods of removing floor finish with floor finish removal pad assemblies are described. In particular, the floor finish removal pad assemblies include a compressible backing pad and a plurality of discontinuously arranged non-rigid coated abrasives or a single discontinuously patterned substantially coextensive coated abrasive. Methods using such floor finish removal pad assemblies may remove floor finish effectively even without the use of chemical strippers.

The present application relates to a composite binding agent grinding wheel, wherein a weight percentage of each raw material of the grinding wheel is: 45-65% of pretreatment abrasive, 8-20% of resin bonding agent, 5-12% of hexagonal boron nitride, 5-10% of silicon dioxide, 5-15% of ceramic powder, 6-12% of prealloy powder bonding agent, and 1-3% of boron powder. The composite binding agent super-hard grinding wheel prepared by the present application can achieve nano-level grinding surface quality when grinding epitaxial wafers, and the grinding wheel has strong self-sharpening and high sharpness. It has obvious advantages in the finishing of silicon carbide crystal epitaxial wafers, which can solve the current limitations of back thinning processing of silicon carbide crystal epitaxial wafers.

An abrasive grain is disclosed and may include a body. The body may define a length (l), a height (h), and a width (w). In a particular aspect, the length is greater than or equal to the height and the height is greater than or equal to the width. Further, in a particular aspect, the body may include a primary aspect ratio defined by the ratio of length:height of at least about 2:1. The body may also include an upright orientation probability of at least about 50%.

A method includes: providing a mold having a plurality of mold cavities, wherein each mold cavity is bounded by a plurality of faces joined along common edges; filling at least some of the mold cavities with a sol-gel composition that includes a release agent dispersed therein; at least partially drying the sol-gel composition thereby forming shaped ceramic precursor particles; calcining at least a portion of the shaped ceramic precursor particles to provide calcined shaped ceramic precursor particles; and sintering at least a portion of the calcined shaped ceramic precursor particles to provide ceramic shaped abrasive particles. A sol-gel composition, shaped ceramic precursor particles, and ceramic shaped abrasive particles associated with practice of the method are also disclosed.

Provided is a polishing method that can efficiently achieve a surface of a super-hard material from which latent defects are precisely eliminated. The polishing method provided by the present invention is used for polishing a substrate made of a material having a Vickers hardness of 1500 Hv or higher. The polishing method includes: a step of carrying out preliminary polishing on the substrate using a preliminary polishing composition; and a step of carrying out final polishing on the preliminarily polished substrate using a final polishing composition. Here, a surface roughness Ra.sub.PRE of the preliminarily polished substrate measured by an AFM is 0.1 nm or less, and a polishing removal in the final polishing step is 0.3 .Math.m or more.

Provided are a composition for chemical mechanical polishing and a method for polishing allowing a tungsten film- or silicon nitride film-containing semiconductor substrate to be polished at a high speed, while also enabling a reduction in the occurrence of a surface defect in the polished face after polishing. A composition for chemical mechanical polishing according to the present invention comprises (A) abrasive grains containing titanium nitride and (B) a liquid medium, wherein the absolute value of the zeta-potential of said (A) component in the composition for chemical mechanical polishing is 8 mV or higher.

Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.

An abrasive article including a bonded abrasive body having abrasive particles contained within a bond material, and at least a portion of the abrasive particles comprise a multiphase aluminosilicate.

Provided is a new cerium-based particle and a polishing slurry composition including the same. The new cerium-based particle may include a self-assembly of fine particles and an organic material.