Ceramic-bonded diamond composite particle includes a plurality of diamond grains and silicon carbide reaction bonded to the diamond grains having a composition of 60-90 wt. % diamond, 10-40 wt. % silicon carbide, ≦2 wt. % silicon. Particles are formed by processes that forms granules in a pre-consolidation process, forms a densified compact including ceramic-bonded diamond composite material in a consolidation process or forms ceramic-bonded diamond composite material directly, and a post-consolidation process in which the densified compact or ceramic-bonded diamond composite material is mechanically broken to form a plurality of the particles. Inert or active material can be incorporated into the densified compact or coated on granules to reduce the number and extent of diamond to silicon carbide bonding occurring in the consolidation process and make the ceramic-bonded diamond composite material more friable and easily breakable into composite particles.

An abrasive particle can include a coating overlying at least a portion of a core. In an embodiment, the coating can include a first portion overlying at least a portion of the core and a second portion overlying at least a portion of the core, wherein the first portion can include a ceramic material and the second portion can include a silane or a silane reaction product. In a particular embodiment, the first portion can consist essentially of silica. In another particular embodiment, the first portion can include a surface roughness of not greater than 5 nm and a crystalline content of not greater than 60%.

An abrasive article with a bonded abrasive body having a ratio of diameter to thickness of at least 10:1. The abrasive article can include secondary abrasive particles contained in a bond material, wherein the secondary abrasive particles include agglomerated primary abrasive particles.

The present invention relates to core shell silica particles, wherein each core shell silica particle comprises a silica core, and a surface of the silica core is etched with metal silicate, the core shell silica particles prepared by: i) admixing an amount of silica particles in water with an amount of a base, wherein the base comprises a monovalent metal ion, to produce core shell silica particles, each core shell silica particle comprising a silica core, and a surface of the silica core etched with a silicate of the monovalent metal ion; and ii) reacting the core shell silica particles formed in step i) with a metal salt comprising a second metal ion, to form core shell silica particles comprising silicate of the second metal ion on the surface of the silica core.

A cubic boron nitride sintered body including cubic boron nitride and a binder phase, wherein a content of the cubic boron nitride is 40 volume % or more and 80 volume % or less; a content of the binder phase is 20 volume % or more and 60 volume % or less; an average particle size of the cubic boron nitride is 0.5 μm or more and 4.0 μm or less; the binder phase contains TiC and TiB.sub.2 and contains substantially no AlN and/or Al.sub.2O.sub.3; a (101) plane of TiB.sub.2 in the binder phase shows a maximum peak position (2θ) in X-ray diffraction of 44.2° or more; and a (200) plane of TiC in the binder phase shows a maximum peak position (2θ) in X-ray diffraction of less than 42.1°.

Magnetizable abrasive particles are described comprising ceramic particles having outer surfaces comprising a coating of unsintered polyion and magnetic particles bonded to the polyion. In favored embodiments, the magnetic particles have a magnetic saturation of at least 10, 15, 20, 25, 30, 35, 40, 45 or 50 emu/gram. In another embodiment, an abrasive article is described comprising a plurality of magnetizable abrasive particles as described herein retained in a binder material. Also described are method of making magnetizable abrasive particles and methods of making an abrasive article comprising magnetizable abrasive particles.

A cubic boron nitride particle population having highly-etched surfaces and a high toughness index is produced by blending a reactive metal powder with a plurality of cubic boron nitride particles to form a blended mixture. The blended mixture is compressed to form a compressed mixture. The compressed mixture is subjected to a temperature and a pressure, where the temperature is controlled to cause etching of the plurality of cubic boron nitride particles by reaction of cubic boron nitride with the reactive metal powder, thereby forming a plurality of etched cubic boron nitride particles. Also, the temperature and pressure are controlled to cause boron nitride to remain in a cubic boron nitride phase. Afterwards, the plurality of etched cubic boron nitride particles is recovered from the compressed mixture to form the particle population. Preferably, the particle population contains no hexagonal boron nitride.

Provided are a composition for chemical mechanical polishing and a method for chemical mechanical polishing, whereby a tungsten film as a wiring material can be polished at high speed, and the occurrence of surface defects in a polished surface can be reduced. A composition for chemical mechanical polishing pertaining contains (A) alumina particles, at least a portion of the surface of which is coated with a coating film of silica alumina, and (B) a liquid medium.

An abrasive particle can include a coating overlying at least a portion of a core. In an embodiment, the coating can include a first portion overlying at least a portion of the core and a second portion overlying at least a portion of the core, wherein the first portion can include a ceramic material and the second portion can include a silane or a silane reaction product. In a particular embodiment, the first portion can consist essentially of silica. In another particular embodiment, the first portion can include a surface roughness of not greater than 5 nm and a crystalline content of not greater than 60%.

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.