A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is −0.45 or less.

The disclosure relates to cerium based particles having a rough surface and their use as a component of a polishing composition, especially for chemical mechanical polishing. The cerium based particles have substantially the shape of polyhedrons which have one or more faces with protrusions thereon, said protrusions being integrally formed with said cerium based particles. The present disclosure also relates to the method of preparation of the cerium based particles.

A polishing slurry according to the present invention is a polishing slurry for polishing a polishing object including a resin, wherein the polishing slurry includes alumina abrasives and silica abrasives, the silica abrasives include aggregate particles composed of a plurality of primary particles of colloidal silica, and an average particle size of the primary particles is smaller than a median size of the alumina abrasives.

The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. It includes a polyurea polishing layer and a polyurea matrix. The polyurea has a soft segment being a copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix being cured with a curative agent and including gas or liquid-filled polymeric microelements. The polyurea matrix has a bulk region and a transition region adjacent the bulk region that extends to the polishing layer. The polymeric microelements in the transition region decrease in thickness as they approach the polishing layer with thickness of the compressed microelements adjacent the polishing layer being less than fifty percent of a diameter of the polymeric microelements in the bulk region. The polishing layer remains hydrophilic during polishing in shear conditions.

A barrier chemical mechanical planarization polishing composition is provided that includes suitable chemical additives. The suitable chemical additives are silicate compound and high molecular weight polymers/copolymers. There is also provided a chemical mechanical polishing method using the barrier chemical mechanical planarization polishing composition.

The invention relates to cerium based core-shell particles having a core of cerium oxide optionally doped with at least one metal (M) and a shell consisting of a plurality of nanoparticles of cerium oxide optionally doped with at least one metal (M′), which can be the same or different from metal (M), formed on the surface of the core particle. The invention also relates to dispersions thereof in a liquid medium, to a process for producing the same and to the use of these particles and dispersions in polishing applications such as chemical mechanical polishing.

A slurry containing abrasive grains and a liquid medium, the abrasive grains including first particles and second particles being in contact with the first particles, the first particles containing ceria, the first particles having a negative zeta potential, the second particles containing a hydroxide of a tetravalent metal element, and the second particles having a positive zeta potential.

Disclosed is a chemical mechanical polishing solution containing water, cerium oxide abrasive particles and hydroxylamine, which can also increase the removal rate of patterned silicon dioxide with further addition of 4-hydroxybenzoic acid or salicylhydroxamic acid.

Provided is a new cerium-based particle and a polishing slurry composition including the same. The new cerium-based particle may include a self-assembly of fine particles and an organic material.

A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. ##STR00001##
[In formula (1), R represents a hydroxyl group or a monovalent organic group].