C11D1/345

Cleaning compositions employing extended chain anionic surfactants

The invention discloses synergistic combinations of surfactant blends and cleaning compositions employing the same. In certain embodiments a surfactant system is disclosed which includes an extended anionic surfactant with novel co-surfactants including one or more of an alkyl glycerol ether, an ethoxylated alkyl glycerol ether, an alcohol ethoxylate and/or a gemini surfactant. This system forms emulsions with, and can remove greasy and oily stains, even those comprised of non-trans fats. The compositions may be used alone, as a pre-spotter or other pre-treatment or as a part of a soft surface or hard surface cleaning composition.

Concentrated solid hard surface cleaner
11603510 · 2023-03-14 · ·

A solid hard surface cleaning composition suitable for replacing liquid formulations while providing at least equivalent or enhanced cleaning performance, including at lower concentrations, is provided. The solid hard surface cleaning compositions include alkali metal carbonate alkalinity source(s), aminocarboxylic acid chelant(s), amphoteric surfactant(s), polyacrylate polymer(s) and anionic surfactant(s). The solid hard surface cleaning compositions can include additional functional ingredients, such as corrosion inhibitors. The solid hard surface cleaning compositions do not include hydroxide alkalinity and beneficially provide stable ready-to-use formulations that are safe for contact without the use of personal protective equipment (PPE) and are compatible with soft metals.

CLEANING FLUID AND CLEANING METHOD
20230065213 · 2023-03-02 · ·

An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate.

The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.

CLEANING SOLUTION AND CLEANING METHOD
20220325208 · 2022-10-13 · ·

The present invention provides: a cleaning liquid for semiconductor substrates having undergone CMP, the cleaning liquid being excellent in temporal stability and cleaning performance; and a method of cleaning such semiconductor substrates. A cleaning liquid of the invention contains: a first amine compound which is represented by Formula (1) and whose conjugated acid has a first acidity constant of not less than 8.5; and a second amine compound (provided that the first amine compound is excluded). The mass ratio of the first amine compound content to the second amine compound content is 1 to 100, and the cleaning liquid has pH of 6.0-12.0 at 25° C.

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METHOD FOR PRODUCING TREATMENT LIQUID
20230143521 · 2023-05-11 · ·

An object of the present invention is to provide a method for producing a treatment liquid, having excellent filterability.

The method for producing a treatment liquid of an embodiment of the present invention is a method for producing a treatment liquid, the method including filtering an object to be purified including a surfactant, using a first filter having a first filter medium, to produce a treatment liquid for a semiconductor substrate, in which the first filter medium includes at least one selected from the group consisting of a nylon, a polyallyl sulfonic acid, a perfluoroalkoxy alkane which has been subjected to a hydrophilization treatment, a polytetrafluoroethylene which has been subjected to a hydrophilization treatment, a polyolefin which has been subjected to a hydrophilization treatment, and a polyvinylidene fluoride which has been subjected to a hydrophilization treatment, and the surfactant includes at least one selected from the group consisting of a nonionic surfactant including a group represented by Formula (1) and an anionic surfactant including a group represented by Formula (1).

Formula (1) (LO).sub.n

L represents an alkylene group, and n represents 3 to 55.

COLD-WATER LAUNDRY DETERGENTS
20170369816 · 2017-12-28 ·

Laundry detergents and their use for cold-water cleaning are disclosed. The detergents comprise a lipase and a mid-chain headgroup surfactant or an alkylene-bridged surfactant. The mid-chain headgroup surfactants have a C.sub.14-C.sub.30 alkyl chain and a polar group bonded to a central zone carbon of the C.sub.14-C.sub.30 alkyl chain. The alkylene-bridged surfactants comprise a C.sub.12-C.sub.18 alkyl chain, a polar group, and a C.sub.1-C.sub.2 alkylene group bonded to the polar group and a central zone carbon of the C.sub.12-C.sub.18 alkyl chain. Surprisingly, when combined with lipases, detergents formulated with the mid-chain headgroup or alkylene-bridged surfactants effectively liquefy greasy soils at low temperature and provide outstanding cold-water performance in removing greasy stains such as bacon grease, butter, cooked beef fat, or beef tallow from soiled articles.

NON-IONIC AND ANIONIC SURFACTANTS BASED ON TOCOPHEROL

The presently claimed invention relates to the use of at least one compound of general formula (I) as an emulsifier or a stabilizer. The presently claimed invention further relates to the use of at least one compound of general formula (I) as an emulsifier or stabilizer in a polymerization reaction, preferably an emulsion polymerization. The presently claimed invention also relates to a method of emulsifying and/or stabilizing or dispersing liquids or solids in emulsion polymerization using at least one compound of general formula (I). Further, the presently claimed invention relates to a cleaning composition comprising at least one compound of general formula (I) and at least one additive.

CLEANING COMPOSITIONS EMPLOYING EXTENDED CHAIN ANIONIC SURFACTANTS
20230183605 · 2023-06-15 ·

The invention discloses synergistic combinations of surfactant blends and cleaning compositions employing the same. In certain embodiments a surfactant system is disclosed which includes an extended anionic surfactant with novel co-surfactants including one or more of an alkyl glycerol ether, an ethoxylated alkyl glycerol ether, an alcohol ethoxylate and/or a gemini surfactant. This system forms emulsions with, and can remove greasy and oily stains, even those comprised of non-trans fats. The compositions may be used alone, as a pre-spotter or other pre-treatment or as a part of a soft surface or hard surface cleaning composition.

CLEANING LIQUID COMPOSITION AND CLEANING METHOD USING SAME

The present disclosure relates to a cleaning liquid composition and a cleaning method using the same. A polishing slurry composition according to an embodiment of the present disclosure includes: a chelating agent containing an organic salt; and an anionic surfactant.

Liquid composition for removing titanium nitride, semiconductor-element cleaning method using same, and semiconductor-element manufacturing method

This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like. The mass concentration of potassium permanganate in the abovementioned oxidizing agent (A) is between 0.001% and 0.1%, inclusive, and the mass concentration of the abovementioned fluorine compound (B) is between 0.01% and 1%, inclusive.