A method for cleaning a substrate includes the following: exposing the substrate to a cleaning agent to remove impurities on a surface of the substrate; exposing the substrate to a dewetting chemical agent in a liquid phase to remove the cleaning agent on the surface of the substrate; solidifying the dewetting chemical agent in the liquid phase remaining on the surface of the substrate to obtain the dewetting chemical agent in a solid phase; and sublimating and removing the dewetting chemical agent in the solid phase.

To provide a substrate pattern filling composition capable of suppressing pattern collapse and a method for using the same. A substrate pattern filling composition comprising a first solute (A), a second a solute (B) and a solvent (C), and a method for using the same.

The present invention is a self-assembled monolayer removing liquid for selectively removing a self-assembled monolayer provided on a surface of a substrate, the removing liquid having a Hansen solubility parameter positioned in a first Hansen sphere of a material for forming the self-assembled monolayer and in a second Hansen sphere of the self-assembled monolayer, the first Hansen sphere being defined by a center value (d.sub.1, p.sub.1, h.sub.1) [MPa.sup.1/2] and a sphere radius R.sub.1 [MPa.sup.1/2] in a Hansen solubility parameter space, the second Hansen sphere being defined by a center value (d.sub.2, p.sub.2, h.sub.2) [MPa.sup.1/2] and a sphere radius R.sub.2 [MPa.sup.1/2] in the Hansen solubility parameter space.

Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of at least one of dimethyl sulfoxide (DMSO) and N-formyl morpholine, and (B) a second component consisting of at least one of N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, N,N-dimethyl acetoacetamide and N-methyl--caprolactam.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

Described is a post chemical-mechanical-polishing (post-CMP) cleaning composition comprising or consisting of: (A) one or more water-soluble nonionic copolymers of the general formula (I) and mixtures thereof, formula (I) wherein R.sub.1 and R.sub.3 are independently from each other hydrogen, methyl, ethyl, n-propyl, iso-propyl, n-butyl, iso-Butyl, or sec-butyl, R.sub.2 is methyl and x and y are an integer, 1 (B)poly(acrylic acid) (PAA) or acrylic acid-maleic acid copolymer with a mass average molar mass (Mw) of up to 10,000 g/mol, and (C) water, wherein the pH of the composition is in the range of from 7.0 to 10.5. ##STR00001##

The rinsing composition for a silicon wafer of the present invention contains: a water-soluble polymer A containing a constitutional unit A having a betaine structure; and an aqueous medium. The water-soluble polymer A preferably contains a constitutional unit expressed by Formula (1) below. The water-soluble polymer preferably further contains a constitutional unit B expressed by Formula (2) below. The weight average molecular weight of the water-soluble polymer A is preferably 1,000 or more and preferably 3,000,000 or less. The rinsing composition for a silicon wafer of the present invention contains a pH regulator as needed. ##STR00001##

There is provided a maintenance liquid, which is used in maintenance of a device equipped with a discharge head for discharging an ultraviolet ray curable-type composition containing the acyl phosphine oxide-based photopolymerization initiator toward an attachment object, including a polymerizable compound in which a saturation solubility of an acyl phosphine oxide-based photopolymerization initiator at 20 C. is equal to or greater than 5.0% by mass.

A surface treatment composition according to the present invention is used for treating a surface of a polished object to be polished which is obtained after polishing with a polishing composition including ceria, using the surface treatment composition including a (co)polymer having a monomer-derived structural unit having a carboxyl group or a salt group thereof, a residue removing accelerator composed of a specific compound having a hydroxyl group, and a dispersing medium, wherein pH is less than 7.

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 4) at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion; and 5) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.