Disclosed herein are methods that include contacting a skin surface with a first liquid composition; and then contacting in the skin surface with a cationic coated article loaded with a second liquid composition, while at least some portion of the first liquid composition remains on the skin surface, wherein one or both of the first liquid composition or the second liquid composition includes acrylate copolymer particles dispersed therein, the acrylate copolymer particles including the reaction product of a reaction mixture, the reaction mixture including monomers, the monomers including from about 5 wt % to about 50 wt % of at least one high Tg monomer where the wt % of the high Tg monomer is with respect to the total weight of the monomers in the reaction mixture; and from about 20 wt % to about 80 wt % of at least one low Tg monomer where the wt % of the low Tg monomer is with respect to the total weight of the monomers in the reaction mixture, wherein the particles have a number average diameter of at least about 100 nm and wherein at least one and only one of the first or the second composition comprises greater than or equal to 60 wt % of at least one alcohol.

The object of the present invention is to provide a cleaning agent that is superior in the initial cleaning effect and allows residues to be easily distributed evenly in the next fabricated molded article. The object is achieved by a cleaning agent used for a molding machine and including a thermoplastic resin and a glass wool.

The object of the present invention is to provide a cleaning agent that is superior in the initial cleaning effect and allows residues to be easily distributed evenly in the next fabricated molded article. The object is achieved by a cleaning agent used for a molding machine and including a thermoplastic resin and a glass wool.

The present invention provides a cleaning liquid for a semiconductor substrate that has been subjected to CMP, in which the cleaning liquid has an excellent selectivity for RuO.sub.2 removing performance; and a method for cleaning a semiconductor substrate that has been subjected to CMP. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a perhalogen acid and a halogen acid.

The present invention provides cleaning solutions for removing ink, coating, varnish, adhesive, etc. residue from printing equipment. The cleaning solutions of the present invention comprise one or more solvents, preferably selected from acetoacetates, alcohols, glycol ethers, glycol esters, terpenes, and water, and are preferably free of surfactants. The cleaning solutions of the invention have a relative evaporation time (RET) of less than 60 seconds, and a ratio of the RET to the radius of the sphere of solubility of the resin in the ink to be removed of less than 6.

The present invention provides cleaning solutions for removing ink, coating, varnish, adhesive, etc. residue from printing equipment. The cleaning solutions of the present invention comprise one or more solvents, preferably selected from acetoacetates, alcohols, glycol ethers, glycol esters, terpenes, and water, and are preferably free of surfactants. The cleaning solutions of the invention have a relative evaporation time (RET) of less than 60 seconds, and a ratio of the RET to the radius of the sphere of solubility of the resin in the ink to be removed of less than 6.

A human odor eliminating composition is described having as ingredients silver water, zeolite, activated carbon and ozone and optionally sodium bicarbonate. The composition can be used as a concentrate or diluted with water for various applications, such as a spray, wipes, or liquid use. The composition can also be a dry powder. It can be used as an additive in soaps, detergents, hand sanitizers, and even on hunting equipment such as tents, gun cases, bags and more.

An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

An object of the present invention is to provide a chemical liquid having excellent developability and excellent defect inhibition performance. Another object of the present invention is to provide a chemical liquid storage body, a chemical liquid filling method, and a chemical liquid storage method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, a metal impurity, and an organic impurity, in which the metal impurity contains metal atoms, a total content of the metal atoms in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 50 mass ppt, a total content of the organic impurity in the chemical liquid with respect to the total mass of the chemical liquid is 0.1 to 10,000 mass ppm, the organic impurity contains an alcohol impurity, and a mass ratio of a content of the alcohol impurity to the total content of the organic impurity is 0.0001 to 0.5.

To provide a composition for surface treatment capable of treating a surface of a polished object to be polished having both of a silicon-silicon bond and a nitrogen-silicon bond by sufficiently removing defects on the surface of the polished object to be polished. The composition for surface treatment contains a nonionic water-soluble polymer (A) having a main chain including only a carbon atom or a main chain consisting of a carbon atom and a nitrogen atom, and an anionic water-soluble polymer (B) having a main chain including only a carbon atom and a side chain having a sulfonic acid group or a group having a salt thereof or a carboxyl group or a group having a salt thereof, and being bonded to the main chain including only a carbon atom, and the composition is used for surface treatment of a polished object to be polished containing a silicon-silicon bond and a nitrogen-silicon bond and a pH of the composition is less than 9.0.