The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

A sensor array includes a plurality of sensors. A sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array. A method of treating the sensor array includes exposing at least the sensor pad to a wash solution including sulfonic acid and an organic solvent and rinsing the wash solution from the sensor pad.

A cleaning composition, which is suitable for cleaning fuel delivery systems, air-intake systems, intake valves, and combustion chambers, includes at least 3 wt. % of a polyether component, at least 5 wt. % of a polar solvent, and at least 5 wt. % a non-polar solvent. The polyether component is selected from polyethers, polyetheramines, and mixtures thereof.

The present invention relates to a method for removing a foreign material from the surface of an article comprising the following steps: i) providing an article having a surface covered at least partly with a foreign material; ii) contacting the article provided in step i) with a cleaning medium being an acid having a pKa in the range from −10 to 7 having a minimum concentration of 1 wt.-% and with a carrier medium having a density different from the density of the cleaning medium to obtain a mixture comprising the foreign material solved and/or dispersed in the cleaning medium, the carrier medium and the article free from the foreign material; iii) allowing the mixture obtained in step ii) to separate to obtain a heterophasic emulsion comprising at least a first phase comprising the carrier medium and the article free from the foreign material and a second phase comprising the cleaning medium and the foreign material solved and/or dispersed therein; iv) separating the phases obtained in step iii); and v) separating the article free from the foreign material from the carrier medium. Furthermore, the present invention relates to an installation for carrying out the inventive process.

The present application provides compositions comprising 1,2-dichloro-1,2-difluoroethylene (i.e., CFO-1112) and, optionally, an additional component. The present application further provides use of the compositions provided herein in cleaning, solvent, carrier fluid, and deposition applications.

A cleaning liquid composition is provided. More particularly, a cleaning liquid composition includes a transition metal compound represented by Chemical Formula 1 (see the detailed description of the present invention); and a hydrocarbon-based solvent, and a cleaning method of a polymerization apparatus using the same.

An automotive surface is cleaned by applying an effective amount of a cleaning composition comprising a) at least one hydrocarbon solvent in an amount from about 3 weight percent to about 20 weight percent of the composition, b) at least one thickener/rheology modifier in an amount from about 0.01 weight percent to about 3 weight percent, c) at least one silicone fluid has a viscosity ranging from about 500 to about 20,000 centistokes at 25° C., present in an amount from about 0.1 weight percent to about 3 weight percent, d) at least one wetting agent in an amount from about 0.001 to about 2%, e) at least one hydrophobic additive in an amount from about 0.1 to about 3%, and f) water in an amount from about 60 weight percent to about 85 weight percent to the automotive surface with an application implement.

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4).

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, each of L.sup.1 and L.sup.2 represents a C1 to C6 alkyl group, and the sum of the number of carbon atoms of the alkyl group L.sup.1 and that of the alkyl group L.sup.2 is 6 or less) in an amount of 80 mass % or more.

##STR00001##

The present invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition which contains a solvent but no salt, the solvent containing a C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound. As the C8 to C10 linear-chain, saturated, aliphatic hydrocarbon compound, a linear-chain hydrocarbon compound is used.