A composition comprising: (i) 1,1-difluoroethene (vinylidene fluoride, R-1132a); (ii) carbon dioxide (CO.sub.2, R-744); (iii) pentafluoroethane (R-125); and (iv) one or more of trifluoromethane (R-23) and hexafluoroethane (R-116).

The present application provides azeotrope or azeotrope-like compositions comprising dimethyl carbonate and a perfluoroheptene ether or a perfluoropentene ether, wherein the perfluoroheptene ether or perfluoropentene ether is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the dimethyl carbonate. Methods of using the composition provided herein in cleaning and carrier fluid applications are also provided.

A nonflammable solvent composition, a method of cleaning an article, and a method of depositing a material on a substrate are disclosed. The nonflammable solvent composition includes a fluorocyclopentane in which 3 to 9 hydrogen atoms have each been replaced by a fluorine atom; trans-1,2-dichloroethylene (t-DCE); and at least one organic compound, such as a C.sub.2-C.sub.6 alcohol, a C.sub.1-C.sub.6 alkane, and a C.sub.3-C.sub.6 cycloalkane. Amounts of the fluorocyclopentane, t-DCE, and the organic compound in the nonflammable composition are selected so that the composition is an azeotrope or is azeotrope-like. The method of cleaning an article includes contacting the article with the nonflammable composition via vapor degreasing or wet cleaning. The method of depositing a material on a substrate includes dissolving the material in the nonflammable solvent composition, applying the composition containing the material to the substrate, and evaporating the composition from the substrate.

An azeotrope-like mixture consisting essentially of chlorotrifluoropropene and at least one component selected from the group consisting of pentane, hexane, methanol, and trans-1,2-dichloroethene.

The present application provides azeotrope or azeotrope-like compositions comprising dimethyl carbonate and a perfluoroheptene ether or a perfluoropentene ether, wherein the perfluoroheptene ether or perfluoropentene ether is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the dimethyl carbonate. Methods of using the composition provided herein in cleaning and carrier fluid applications are also provided.

A composition comprising: (i) 1,1-difluoroethene (vinylidene fluoride, R-1132a); (ii) carbon dioxide (CO.sub.2, R-744); (iii) pentafluoroethane (R-125); and (iv) one or more of trifluoromethane (R-23) and hexafluoroethane (R-116).

Disclosed herein are solvent compositions and methods of using the solvent compositions. The solvent composition includes at least trans-1,2-dichloroethylene (t-DCE) and 1,1,2,2-tetrafluoroethyl-2,2,3,3-tetrafluoropropyl ether (TFE-TFPE). The solvent composition may also include an oxygenated solvent, such as an alcohol or fluorinated ether. A method of cleaning the surface of an article includes contacting the surface with the solvent composition to dissolve, disperse, or displace a contaminant on the surface, and removing the solvent composition containing the contaminant from the surface.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

A composition comprising: (i) 1,1-difluoroethene (vinylidene fluoride, R-1132a); (ii) carbon dioxide (CO.sub.2, R-744); (iii) pentafluoroethane (R-125); and (iv) one or more of trifluoromethane (R-23) and hexafluoroethane (R-116).

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.