The present application provides binary azeotrope or azeotrope-like compositions comprising perfluoroheptene and an additional component, wherein the additional component is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the perfluoroheptene. Methods of using the compositions provided herein in cleaning and carrier fluid applications are also provided.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

The present application provides binary azeotrope or azeotrope-like compositions comprising perfluoroheptene and an additional component, wherein the additional component is present in the composition in an amount effective to form an azeotrope composition or azeotrope-like composition with the perfluoroheptene. Methods of using the compositions provided herein in cleaning and carrier fluid applications are also provided.

Composition, method and system for TiN hard mask removal from electronic circuitry devices, such as advanced pattern wafers have been disclosed. The cleaning compositions preferably comprise an etchant agent (also referred to as a base), an oxidizing agent, an oxidizing stabilizer (also referred to as a chelating agent), an ammonium salt, a corrosion inhibitor, and a solvent. Other optional additives could be provided. It is preferable that the pH of the cleaning composition be greater than 5.5. The cleaning composition is preferably free from dimethyl sulfoxide and tetramethylammonium hydroxide.

The present disclosure relates to the use of a polar solvent as an additive to a solution containing a component that releases ammonia at above 200 C. for the removal of deposits or impurities in a selective catalytic reduction system, wherein the polar solvent has a boiling point at 101.3 kPa of at least 140 C. The present disclosure further relates to a method of removing deposits or impurities in a selective catalytic reduction system and a method of operating a selective catalytic reduction system.