Provided is a method of producing a target material with reduced particle generation during sputtering, which is a method of producing a sputtering target material whose material is an alloy M, including a sintering step of sintering a mixed powder obtained by mixing a first powder and a second powder. A material of the first powder is an alloy M1 in which the proportion of a B content is from 40 at. % to 60 at. %. A material of the second powder is an alloy M2 in which the proportion of a B content is from 20 at. % to 35 at. %. The proportion of a B content in the mixed powder is from 33 at. % to 50 at. %. A metallographic structure including a (CoFe).sub.2B phase and a (CoFe)B phase is formed in the sintering step. A boundary length per unit area Y (1/μm), which is obtained by measuring a boundary length between the (CoFe).sub.2B phase and the (CoFe)B phase using a scanning electron microscope, and a proportion X (at. %) of a B content of the alloy M satisfy the expression

Y<−0.0015×(X−42.5).sup.2+0.15.

Provided is a method of producing a target material with reduced particle generation during sputtering, which is a method of producing a sputtering target material whose material is an alloy M, including a sintering step of sintering a mixed powder obtained by mixing a first powder and a second powder. A material of the first powder is an alloy M1 in which the proportion of a B content is from 40 at. % to 60 at. %. A material of the second powder is an alloy M2 in which the proportion of a B content is from 20 at. % to 35 at. %. The proportion of a B content in the mixed powder is from 33 at. % to 50 at. %. A metallographic structure including a (CoFe).sub.2B phase and a (CoFe)B phase is formed in the sintering step. A boundary length per unit area Y (1/μm), which is obtained by measuring a boundary length between the (CoFe).sub.2B phase and the (CoFe)B phase using a scanning electron microscope, and a proportion X (at. %) of a B content of the alloy M satisfy the expression

Y<−0.0015×(X−42.5).sup.2+0.15.

The present disclosure discloses a preparation method of a powder metallurgy (PM) superalloy with high strength and plasticity. Under the multi-field coupling action of a thermal field and a force field, the PM superalloy is obtained in a high-temperature graphite mold by using the method of conducting heat preservation and oscillating-pressure sintering in two steps. Under the action of a circulating pressure, rearrangement of powders and discharge of pores are promoted, and therefore, the PM superalloy is sintered and formed. The present disclosure further discloses a PM superalloy prepared by using the method above. The PM superalloy has the characteristics of low grade of prior particle boundary defects, uniform grain refinement and high density. The sintered PM superalloy obtained in the present disclosure has a yield strength of 955 MPa, a tensile strength of 1,437 MPa and an elongation of 31.9%, and has high strength and plasticity.

The present disclosure discloses a preparation method of a powder metallurgy (PM) superalloy with high strength and plasticity. Under the multi-field coupling action of a thermal field and a force field, the PM superalloy is obtained in a high-temperature graphite mold by using the method of conducting heat preservation and oscillating-pressure sintering in two steps. Under the action of a circulating pressure, rearrangement of powders and discharge of pores are promoted, and therefore, the PM superalloy is sintered and formed. The present disclosure further discloses a PM superalloy prepared by using the method above. The PM superalloy has the characteristics of low grade of prior particle boundary defects, uniform grain refinement and high density. The sintered PM superalloy obtained in the present disclosure has a yield strength of 955 MPa, a tensile strength of 1,437 MPa and an elongation of 31.9%, and has high strength and plasticity.

A magneto-sensitive wire (magneto-sensitive body) made of a Co-based alloy having a composite structure in which crystal grains are dispersed in an amorphous phase. The Co-based alloy is, for example, a Co—Fe—Si—B-based alloy, and the total amount of Si and B is preferably 20 to 25 at % with respect to the Co-based alloy as a whole. Preferably, the average diameter of the crystal grains is 70 nm or less and the area ratio of the crystal grains is 10% or less to the composite structure as a whole. The magneto-sensitive wire has a circular cross section and the wire diameter is about 1 to 100 μm. Such a magneto-sensitive wire can be obtained, for example, through a heat treatment step of heating an amorphous wire composed of a Co-based alloy at a temperature equal to or higher than a crystallization start temperature and lower than a crystallization end temperature.

A magneto-sensitive wire (magneto-sensitive body) made of a Co-based alloy having a composite structure in which crystal grains are dispersed in an amorphous phase. The Co-based alloy is, for example, a Co—Fe—Si—B-based alloy, and the total amount of Si and B is preferably 20 to 25 at % with respect to the Co-based alloy as a whole. Preferably, the average diameter of the crystal grains is 70 nm or less and the area ratio of the crystal grains is 10% or less to the composite structure as a whole. The magneto-sensitive wire has a circular cross section and the wire diameter is about 1 to 100 μm. Such a magneto-sensitive wire can be obtained, for example, through a heat treatment step of heating an amorphous wire composed of a Co-based alloy at a temperature equal to or higher than a crystallization start temperature and lower than a crystallization end temperature.

The present invention relates to an amorphous alloy corresponding to the formula:
Co.sub.aNi.sub.bMo.sub.c(C.sub.1-xB.sub.x).sub.dX.sub.e
wherein X is one or several elements selected from the group consisting of Cu, Si, Fe, P, Y, Er, Cr, Ga, Ta, Nb, V and W; wherein the indices a to e and x satisfy the following conditions: 55≤a≤75 at. % 0≤b≤15 at. % 7≤c≤17 at. % 15≤d≤23 at. % 0.1≤x≤0.9 at. % 0≤e≤10 at. %, each element selected from the group having a content≤3 at. % and preferably ≤2 at. %, the balance being impurities.

The present invention relates to an amorphous alloy corresponding to the formula:
Co.sub.aNi.sub.bMo.sub.c(C.sub.1-xB.sub.x).sub.dX.sub.e
wherein X is one or several elements selected from the group consisting of Cu, Si, Fe, P, Y, Er, Cr, Ga, Ta, Nb, V and W; wherein the indices a to e and x satisfy the following conditions: 55≤a≤75 at. % 0≤b≤15 at. % 7≤c≤17 at. % 15≤d≤23 at. % 0.1≤x≤0.9 at. % 0≤e≤10 at. %, each element selected from the group having a content≤3 at. % and preferably ≤2 at. %, the balance being impurities.

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.