C22C21/003

APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE APPARATUS

An apparatus for manufacturing a semiconductor device and a method of manufacturing the apparatus, the apparatus including a heater configured to heat a target, and a coating layer, the coating layer including a ternary material of transition metal(M)-aluminum(Al)-nitrogen(N) represented by the following Chemical Formula:

[Chemical Formula]


M.sub.xAl.sub.1−xN.sub.y,

wherein x and y satisfy the following relations: 0<x<1 and y≥1.

Process for manufacturing an aluminum alloy part
11692240 · 2023-07-04 · ·

The invention relates to a process for manufacturing a part comprising a formation of successive solid metal layers (201 . . . 20n) that are stacked on top of one another, each layer describing a pattern defined using a numerical model (M), each layer being formed by the deposition of a metal (25), referred to as solder, the solder being subjected to an input of energy so as to start to melt and to constitute, by solidifying, said layer, wherein the solder takes the form of a powder (25), the exposure of which to an energy beam (32) results in melting followed by solidification so as to form a solid layer (201 . . . 20n). The process is characterized in that the solder (25) is an aluminum alloy comprising at least the following alloy elements: —Fe, in a weight fraction of from 1 to 3.7%, preferably from 1 to 3.6%; —Zr and/or Hf and/or Er and/or Sc and/or Ti, in a weight fraction of from 0.5 to 4%, preferably from 1 to 4%, more preferably from 1.5 to 3.5%, even more preferably from 1.5 to 2% each, and in a weight fraction of less than or equal to 4%, preferably less than or equal to 3%, more preferably less than or equal to 2% in total; —Si, in a weight fraction of from 0 to 4%, preferably from 0.5 to 3%; —V, in a weight fraction of from 0 to 4%, preferably from 0.5 to 3%. The invention also relates to a part obtained by this process. The alloy used in the additive manufacturing process according to the invention makes it possible to obtain parts having remarkable features.

ALUMINUM BASED NANOGALVANIC COMPOSITIONS USrEFUL FOR GENERATING HYDROGEN GAS AND LOW TEMPERATURE PROCESSING THEREOF

Alloys comprised of a refined microstructure, ultrafine or nano scaled, that when reacted with water or any liquid containing water will spontaneously and rapidly produce hydrogen at ambient or elevated temperature are described. These metals, termed here as aluminum based nanogalvanic alloys will have applications that include but are not limited to energy generation on demand. The alloys may be composed of primarily aluminum and other metals e.g., tin bismuth, indium, gallium, lead, etc. and/or carbon, and mixtures and alloys thereof. The alloys may be processed by ball milling for the purpose of synthesizing powder feed stocks, in which each powder particle will have the above-mentioned characteristics. These powders can be used in their inherent form or consolidated using commercially available techniques for the purpose of manufacturing useful functional components.

Metallic matrix composite with high strength titanium aluminide alloy matrix and in situ formed aluminum oxide reinforcement
11572609 · 2023-02-07 · ·

Metallic matrix composites include a high strength titanium aluminide alloy matrix and an in situ formed aluminum oxide reinforcement. The atomic percentage of aluminum in the titanium aluminide alloy matrix can vary from 40% to 48%. Included are methods of making the metallic matrix composites, in particular, through the performance of an exothermic chemical reaction. The metallic matrix composites can exhibit low porosity.

NEW ALUMINUM ALLOYS HAVING BISMUTH AND/OR TIN
20230087605 · 2023-03-23 ·

New aluminum alloys having an improved combination of properties are disclosed. In one approach, anew aluminum alloys may include from 0.50 to 3.0 wt. % of X, wherein X comprises (wt. % Bi+wt. % Sn), from 0.50 to 4.0 wt. % Si, from 0.30 to 2.5 wt. % Mg, up to 1.5 wt. % Cu, up to 2.0 wt. % Zn, from 0.05 to 1.5 wt. % Mn, up to 0.70 wt. % Fe, up to 0.35 wt. % of Cr, up to 0.25 wt. % each of Zr and V, and up to 0.15 wt. % Ti, the balance being aluminum, incidental elements and impurities. The new aluminum alloys may comprise at least 0.20 wt. % excess silicon.

ADDITIVE MANUFACTURING OF METAL ALLOYS AND METAL ALLOY MATRIX COMPOSITES
20230127550 · 2023-04-27 ·

An additive manufacturing method of producing a metal alloy article may involve: Providing a supply of a metal alloy in powder form; providing a supply of a nucleant material, the nucleant material lowering the nucleation energy required to crystallize the metal alloy; blending the supply of metal alloy powder and nucleant material to form a blended mixture; forming the blended mixture into a first layer; subjecting at least a portion of the first layer to energy sufficient to raise the temperature of the first layer to at least the liquidus temperature of the metal alloy; allowing at least a portion of the first layer to cool to a temperature sufficient to allow the metal alloy to recrystallize; forming a second layer of the blended mixture on the first layer; and repeating the subjecting and allowing steps on the second layer to form an additional portion of the metal alloy article.

TiCB—Al seed alloy, manufacturing method thereof and heritable aluminum alloy

The present disclosure provides a TiCB—Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB—Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.

HEAT TREATMENT METHOD FOR TITANIUM-ALUMINUM INTERMETALLIC AND HEAT TREATMENT DEVICE THEREFOR
20230183830 · 2023-06-15 ·

A heat treatment method for a titanium-aluminum (TiAl) intermetallic includes the following steps: providing a TiAl intermetallic casting material; performing a first-stage heat treatment on the TiAl intermetallic casting material, where the TiAl intermetallic casting material is heated until a metallographic structure thereof is transformed into the a+γ phase, and is then cooled to room temperature to form a transitional casting material; and performing a second-stage heat treatment on the transitional casting material, where the transitional casting material is heated until a metallographic structure thereof is transformed into the α single phase, and is then cooled to room temperature to form a TiAl intermetallic.

Aluminum alloy strip with improved surface appearance

The invention relates to an aluminum alloy strip with improved surface optics, which is fabricated via hot and/or cold rolling, and consists of a type AA 3xxx, AA 5xxx, AA 6xxx or AA 8xxx aluminum alloy. The object of proposing an aluminum alloy strip that is suitable for attractive and precious surface optics despite the elevated percentage of alloy constituents is achieved in that, after degreasing, the finish-rolled aluminum alloy strip exhibits an increase in the luminance value L*(ΔL) in relation to the rolled-greasy state of more than 5 while measuring the color of the surface in the CIE L*a*b* color space using a standard illuminant D65 and a normal observation angle of 10°, excluding direct reflection in 45°/0° geometry.

TiCB-AL SEED ALLOY, MANUFACTURING METHOD THEREOF AND HERITABLE ALUMINUM ALLOY
20220056558 · 2022-02-24 ·

The present disclosure provides a TiCB-Al seed alloy, a manufacturing method thereof and a heritable aluminum alloy. The TiCB-Al seed alloy includes an Al matrix and TiC.sub.B@TiBC seed crystals dispersed on the Al matrix, wherein the TiC.sub.B@TiBC seed crystal comprises a core part and a shell part, the core part contains B-doped TiC.sub.B, and the shell part covers at least a part of the core part and contains a TiBC ternary phase, wherein the B-doped TiC.sub.B refers to a TiC.sub.B phase formed by B atoms occupying C vacancies in a TiC.sub.x crystal, and the TiBC ternary phase refers to a ternary phase composed of Ti, B and C, wherein x<1.