Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

Provided is a copper alloy sputtering target, wherein, based on charged particle activation analysis, the copper alloy sputtering target has an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less. Additionally provided is a method for manufacturing a copper alloy sputtering target, wherein a copper raw material is melted in a vacuum or an inert gas atmosphere, a reducing gas is thereafter introduced into the melting atmosphere, an alloy element is subsequently added to a molten metal for alloying, and an obtained ingot is processed into a target shape. The present invention aims to provide a copper alloy sputtering target that generates few particles during sputtering, and a method for manufacturing such a sputtering target.

Copper alloys exhibiting enhanced oxidation resistance are provided by adding an amount of sulfur that is effective to enhance oxidative resistance. Such sulfur addition can be achieved by combining elemental forms of copper and sulfur and heating the mixture to form a molten alloy, or by forming a sulfur-rich pre-mix that is added to a base alloy composition. Forming a pre-mix provides improved homogeneity and distribution of the sulfur predominantly in the form of a metal sulfide.

Copper alloys exhibiting enhanced oxidation resistance are provided by adding an amount of sulfur that is effective to enhance oxidative resistance. Such sulfur addition can be achieved by combining elemental forms of copper and sulfur and heating the mixture to form a molten alloy, or by forming a sulfur-rich pre-mix that is added to a base alloy composition. Forming a pre-mix provides improved homogeneity and distribution of the sulfur predominantly in the form of a metal sulfide.

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

The present invention concerns a layer structure comprising: a substrate having a glass or ceramic surface, a layer A at least partially covering the glass or ceramic surface of the substrate, wherein layer A comprises a glass in which at least two mutually different elements are contained as oxides, and a layer B at least partially covering the layer A. Layer B comprises: a resistance alloy having a temperature coefficient of electrical resistance less than 150 ppm/K, and optionally a glass containing at least two mutually different elements as oxides. Layer B contains not more than 20 weight percent of glass based on the total weight of layer B.

A conductive material for connection parts includes a matrix, a Cu—Sn alloy covering layer having a Cu content of 20 to 70 at % and an average thickness of from 0.2 to 3.0 μm, and a Sn covering layer having an average thickness of from 0.05 to 5.0 μm. The matrix is a copper alloy strip containing specified amounts of Cr and Zr or specified amounts of Fe and P, or a Cu—Zn alloy strip containing a specified amount of Zn. The Cu—Sn alloy covering layer and the Sn covering layer are formed in this order on a surface of the matrix.

The present invention provides a titanium copper foil having improved adhesion to solder and higher resistance to discoloration due to a high temperature and high humidity environment, an acid solution or an alkaline solution, and as well as having improved etching processability. The present invention provides a titanium copper foil comprising a base metal, the base metal having a composition containing Ti of from 1.5 to 5.0% by mass, the balance being copper and inevitable impurities, and having a thickness of from 0.018 to 0.1 mm, wherein the titanium copper foil has an Sn plated layer on a surface of the base metal, and has an adhesive strength of 0.5 N or more as measured by a solder adhesive strength test according to the definition in the specification.

A metallic alloy, more particularly, a high-entropy alloy with a composite structure exhibits high strength and good ductility, and is used as a component material in electromagnetic, chemical, shipbuilding, machinery, and other applications, and in extreme environments, and the like.

Provided is a cylindrical sputtering target material formed of copper or a copper alloy, in which an average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N which are measured with respect to the outer peripheral surfaces of both end portions and the outer peripheral surface of the center portion in an axis O direction is set to be equal to or greater than 0.5, and each measured value is in a range of ±20% with respect to the average value of the special grain boundary length ratios Lσ.sub.N/L.sub.N, and the total amount of Si and C which are impurity elements is equal to or smaller than 10 mass ppm and the amount of O is equal to or smaller than 50 mass ppm.