Disclosed are a copper-cobalt-silicon-iron-phosphorus (Cu—Co—Si—Fe—P)-based alloy having strength, electrical conductivity, and excellent bending formability, and a method for producing the alloy. The copper alloy contains 1.2 to 2.5% by mass of cobalt (Co); 0.2 to 1.0% by mass of silicon (Si); 0.01 to 0.5% by mass of iron (Fe); 0.001 to 0.2% by mass of phosphorus (P); a balance amount of copper (Cu); unavoidable impurities; and optionally, 0.05% by mass or smaller of each of at least one selected from a group consisting of nickel (Ni), manganese (Mn) and magnesium (Mg), wherein a ratio between cobalt (Co) mass and silicon (Si) mass meets a relationship: 3.5≤Co/Si≤4.5, wherein a ratio between iron (Fe) mass and phosphorus (P) mass meets a relationship: 1.0<Fe/P. A bimodal structure improves the bending formability while maintaining the electrical conductivity and strength.

Disclosed are a copper-cobalt-silicon-iron-phosphorus (Cu—Co—Si—Fe—P)-based alloy having strength, electrical conductivity, and excellent bending formability, and a method for producing the alloy. The copper alloy contains 1.2 to 2.5% by mass of cobalt (Co); 0.2 to 1.0% by mass of silicon (Si); 0.01 to 0.5% by mass of iron (Fe); 0.001 to 0.2% by mass of phosphorus (P); a balance amount of copper (Cu); unavoidable impurities; and optionally, 0.05% by mass or smaller of each of at least one selected from a group consisting of nickel (Ni), manganese (Mn) and magnesium (Mg), wherein a ratio between cobalt (Co) mass and silicon (Si) mass meets a relationship: 3.5≤Co/Si≤4.5, wherein a ratio between iron (Fe) mass and phosphorus (P) mass meets a relationship: 1.0<Fe/P. A bimodal structure improves the bending formability while maintaining the electrical conductivity and strength.

The present invention relates to matter alloys including copper.

The present invention relates to matter alloys including copper.

A copper alloy for valve seats, and more particularly a copper alloy for valve seats with improved wear resistance, contains 12 to 24% by weight of Ni, 2 to 4% by weight of Si, 7 to 13% by weight of Cr, 20 to 35% by weight of Fe, and a balance of Cu and other impurities.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

In a copper alloy bonding wire for semiconductor devices, the bonding longevity of a ball bonded part under high-temperature and high-humidity environments is improved. The copper alloy bonding wire for semiconductor devices includes in total 0.03% by mass or more to 3% by mass or less of at least one or more kinds of elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (first element), with the balance Cu and inevitable impurities. The inclusion of a predetermined amount of the first element suppresses production of an intermetallic compound susceptible to corrosion under high-temperature and high-humidity environments at the wire bonding interface and improves the bonding longevity of a ball bonded part.

A copper alloy sheet material having improved etching characteristics contains (in mass %) Ni: 1.00 to 4.50%, Si: 0.10 to 1.40%, and optionally one or more kind of Co, Mg, Cr, P, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag. The sheet material has an area ratio S.sub.B/S.sub.S of 0.40 or more in an EBSD measurement on a cross section perpendicular to a rolling direction, wherein S.sub.S represents area of a region satisfying at least one of conditions of a crystal orientation difference from the S1 {241} <112> orientation of 10° or less and a crystal orientation difference from the S2 {231} <124> orientation of 10° or less, and S.sub.B represents an area of a region having a crystal orientation difference from the Brass {011} <211> orientation of 10° or less.

A copper alloy sheet material having improved etching characteristics contains (in mass %) Ni: 1.00 to 4.50%, Si: 0.10 to 1.40%, and optionally one or more kind of Co, Mg, Cr, P, B, Mn, Sn, Ti, Zr, Al, Fe, Zn, and Ag. The sheet material has an area ratio S.sub.B/S.sub.S of 0.40 or more in an EBSD measurement on a cross section perpendicular to a rolling direction, wherein S.sub.S represents area of a region satisfying at least one of conditions of a crystal orientation difference from the S1 {241} <112> orientation of 10° or less and a crystal orientation difference from the S2 {231} <124> orientation of 10° or less, and S.sub.B represents an area of a region having a crystal orientation difference from the Brass {011} <211> orientation of 10° or less.

A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.