The present invention relates to an implantable endoluminal graft comprised of a microporous thin-film metal covering having a plurality of openings and a structural support element underlying and physically attached to the microporous thin-film metal covering, the microporous thin-film metal covering having shape memory properties.

The present disclosure relates generally to thin metal films having an ultra-flat surface and methods of their preparation. In particular, the ultra-flat thin metal films comprise FCC metals. Preferably, the thin metal films are attached to a substrate. Preferred substrates comprise chalcogenides and dichalcogenides. Beneficially, the thin metal films described herein can be prepared at ambient temperatures.

An intravascular stent and method of making an intervascular stent having a hybrid pattern a. The hybrid pattern comprises a plurality of circumferentially self-expansible members comprising a plurality of interconnected, geometrically deformable closed cells, adjacent self-expansible members interconnected by a plurality of bridge members linking a first interconnection between two closed cells in a first self-expansible member to a second interconnection between two closed cells in a second self-expansible member, wherein the second interconnection is circumferentially offset and non-adjacent to the first interconnection.

The invention relates to a device for the transfer of a transfer layer from a substrate, in particular from a growth substrate, to a carrier substrate.

The present invention provides a method for manufacturing a thin film foil, wherein a metal thin film layer is formed on a base substrate through a vacuum deposition process to form an ultra-thin film foil having a thickness of 5 μm or less, preferably 2 μm or less. The provided method for manufacturing a thin film foil comprises the steps of: preparing a base substrate having release properties; preparing a metal raw material; vacuum-depositing the metal raw material on the base substrate to form a metal layer on the base substrate; and separating the base substrate from the metal layer to form a thin film foil, wherein one of a BeCu alloy, a Cu—Ag—Cr ternary alloy, an Ag alloy, a CuMo alloy, and a CuFeP alloy is prepared as the metal raw material.

Ternary and quaternary shape memory alloys, particularly nickel-titanium based quaternary and quaternary shape memory alloys, are disclosed and made by a method employing physical vapor deposition (PVD), such as by sputtering, of NiTiX, wherein X is a ternary metal constituent. By employing PVD processing, ternary and quaternary NiTi alloy bulk materials may be made in in the as-deposited state such that the configuration and conformation of a desired precursor material, e.g., wires, tubes, planar materials, curvilinear, or as the near finished end product, such as a hypotube for stent manufacture, semilunar for cardiac valves or conical for embolic or caval filters, is formed on a removable deposition substrate in the configuration and conformation of the precursor material or near-finished end product.

A structure body includes a free-standing structure including a fibrous member and/or a shell. The fibrous member and/or a shell are each a layered body formed of at least one light-absorbing layer and at least one dielectric layer. The light-absorbing layer includes a light-absorbing material that has an absorption in a visible light region, and the dielectric layer includes a dielectric material. The fibrous member and/or the shell have a three-dimensionally continuous configuration.

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

A method includes providing a coating over a surface of a substrate, a plurality of seed structures being disposed on the surface of the substrate, in which respective heights of the seed structures define local thicknesses of the coating. An optical device includes a substrate, a plurality of seed structures on a surface of the substrate, and a coating on the seed structures and on the surface of the substrate, in which respective heights of the seed structures define local thicknesses of the coating.

A boron doped diamond electrode and its preparation method and application, the electrode is deposited with a boron or nitrogen doped diamond layer or a boron or nitrogen doped diamond layer composite layer on the surface of the electrode substrate, or after a transition layer is disposed on the surface of the substrate, a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer is disposed on the surface of transition layer. The preparation method is depositing or plating a boron or nitrogen doped diamond layer on the surface of the electrode substrate, or providing a transition layer on the surface of the electrode substrate, and then depositing or plating a boron or nitrogen doped diamond layer or a composite layer of boron or nitrogen doped diamond layer on the surface of the transition layer.