Patent classifications
C23C14/0057
METHOD OF SPUTTER-COATING SUBSTRATES OR OF MANUFACTURING SPUTTER COATED SUBSTRATES AND APPARATUS
Whenever substrates are rotationally and continuously conveyed in a vacuum recipient around a common axis and past a magnetron sputter source, sputtering of the target, rotating around a central target axis, by the stationary magnetron plasma is adapted to the azimuthal extents radially differently spaced areas of the substrates become exposed to the target thereby improving homogeneity of deposited layer thickness on the substrates and ensuring that the complete sputter surface of the target is net-sputtered.
OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR
An optical device includes, in sequence, a surface formed of a metal oxide, a samarium oxide-containing layer in contact with the surface formed of a metal oxide, and a magnesium fluoride-containing layer in contact with the samarium oxide-containing layer so as to suppress optical absorption resulting from high-rate sputter deposition of a magnesium fluoride-containing layer on a surface formed of a metal oxide.
SANITARY EQUIPMENT PART
A part includes a base material, a colored layer, an intermediate layer, and a water-repellent-surface layer. The colored layer contains 35 at % to 99 at % of C, 0 at % to less than 40 at % of Cr, 0 at % to less than 15 at % of N, and more than 0 at % to less than 15 at % of O. The intermediate layer contains at least one metal atom selected from Cr, Zr, and Si; and an oxygen atom. The intermediate layer exhibits a sputtering time of 0.5 minutes or more to 9 minutes or less
TiCN having reduced growth defects by means of HiPIMS
A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said target being sputtered in a reactive atmosphere by means of a HIPIMS process in a coating chamber, wherein the reactive atmosphere comprises at least one inert gas; preferably argon, and at least nitrogen gas as the reactive gas, wherein: the reactive atmosphere additionally contains, as a second reactive gas, a gas containing carbon, preferably CH4, used as the source of carbon to produce the TiCN layer wherein, while depositing the TiCN layer, a bipolar bias voltage is applied to the substrate to be coated, or at least one graphite target is used as the source of carbon for producing the TiCN layer, said target being used for sputtering in the coating chamber using a HIPIMS process with the reactive atmosphere having only nitrogen gas as the reactive gas, wherein the Ti targets are preferably operated by means of a first power supply device or a first power supply unit and the graphite targets are operated with pulsed power by means of a second power supply device or a second power supply unit.
Sputtering apparatus and method of fabricating magnetic memory device using the same
A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
Film formation apparatus and film formation method
According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.
NANO COMPOSITE COATING HAVING SHELL-SIMULATED MULTI-ARCH STRUCTURE AS WELL AS PREPARATION METHOD AND APPLICATION THEREOF
The preparation method for a nano composite coating having a shell-simulated multi-arch structure includes: constructing a discontinuous metal seed layer using a vacuum plating technology; and inducing the deposition of a continuous multi-arch structure layer utilizing the discontinuous metal seed layer, thereby realizing the controllable orientated growth of the nano composite coating having the shell-simulated multi-arch structure. The nano composite coating having the shell-simulated multi-arch structure is of a red abalone shell-simulated nacreous layer aragonite structure, meanwhile has high hardness and high temperature resistance, has excellent performances such as high breaking strength, low friction coefficient and corrosion and abrasion resistance in seawater under the condition of maintaining good breaking tenacity, is simple and controllable in preparation process and low in cost, has unlimited workpiece shapes, is easily produced on large scale, and has huge potential in the fields of new energy, efficiency power, ocean engineering, nuclear energy, and micro-electronic/optoelectronic devices.
Packaging Material And Methods Of Manufacture
Packaging materials and methods of manufacture are disclosed. The packaging material comprises a substrate surface and film coating selected from the group consisting of an elastomer, a polymer, an inorganic material and combinations thereof. The film coating includes a first layer and a second layer, the first layer deposited on the second layer. The first layer has a formula of SiO.sub.xN.sub.yC.sub.z, where x is in a range from 1.9 to 2.15, y is in a range from 0.01 to 0.08, and z is in a range from 0.10 to 0.40.
Method for preparing ammonium thiomolybdate-porous amorphous carbon composite superlubricity film
A method for preparing an ammonium thiomolybdate-porous amorphous carbon composite superlubricity film is disclosed. First, a porous amorphous carbon film is prepared by an anode layer ion source assisted plasma chemical vapor deposition method and a reactive magnetron sputtering method on a substrate. The porous amorphous carbon film is then impregnated in an ammonium thiomolybdate solution, so that the ammonium thiomolybdate is adsorbed on the porous amorphous carbon film, and the impregnated porous amorphous carbon film is air dried. During the friction process, the composited porous amorphous carbon superlubricity film prepared in the present disclosure promotes the in-situ decomposition of ammonium thiomolybdate to generate molybdenum disulfide by utilizing the friction heat at the initial stage of running-in, further to generate a graphene-like structure under the function of a catalyst, thus realizing a macroscopic super lubricity through a heterogeneous incommensurate contact between graphene and molybdenum disulfide.
TRANSPARENT CONDUCTIVE LAYER AND TRANSPARENT CONDUCTIVE SHEET
The transparent conductive layer (3) includes a first main surface (5), and a second main surface (6) opposed to the first main surface (5) in a thickness direction. The transparent conductive layer (3) has a first grain boundary (7) in which two end edges (23) in a cross-sectional view are both opened to the first main surface (5) and an intermediate region (25) between the end edges (23) is not in contact with the second main surface (6); and a first crystal grain (31) partitioned by the first grain boundary (7) and facing only the first main surface (5). The transparent conductive layer (3) contains rare gas atoms having a higher atomic number than argon atoms.