C23C14/042

ANTI-ICING MATERIAL WITH STEALTH FUNCTION, PREPARATION METHOD AND USE THEREOF

Disclosed are an anti-icing material with stealth function, a preparation method and use thereof. The anti-icing material with stealth function according to the disclosure includes an electrically insulating and thermally insulating layer, a patterned heating layer, an electrically insulating and thermally conducting layer, and a hydrophobic layer, that are disposed sequentially through stacking, wherein the patterned heating layer has a patterned hollowed-out structure.

External element or timepiece dial made of non-conductive material

A method for fabricating an external element or a timepiece dial from non-conductive material, by performing or repeating a basic cycle of making a base from a non-conductive, or ceramic, or glass. or sapphire substrate; dry coating the base with a first sacrificial protective metal layer; etching a decoration with an ultrashort pulse laser to a depth at least equal to the local thickness of the first layer; dry coating the decoration and the remaining part of the first layer with a second metal and/or coloured decorative treatment layer; chemically removing each first layer; and before or after chemical removal of each first layer, mechanically levelling on the upper level of the base the compound thus formed.

Selective and direct deposition technique for streamlined CMOS processing

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

Fine metal mask having protective portions having protective portion with ratio of thickness reduction equal to single pixel aperture ratio and method for manufacturing the same, mask frame assembly

The fine metal mask provided in the present disclosure includes at least one mask pattern portion, and at least one protective portion that is disposed on and connected with at least one side edge of the at least one mask pattern portion, wherein a thickness of the at least one protective portion is less than a thickness of the at least one mask pattern portion.

FLEXIBLE PHOTO-PATTERNED MASK FOR ORGANIC LIGHT EMITTING DISPLAY WITH HIGH RESOLUTION AND METHOD FOR MANUFACTURING THE SAME
20230043183 · 2023-02-09 ·

The present invention relates to a method for manufacturing a flexible photo-patterned mask. The method includes a) coating a photoresist composition on a substrate to form a photoresist film, b) exposing the photoresist film to pattern the photoresist film, c) developing the patterned photoresist film, and d) curing the developed photoresist film to form a patterned layer having a plurality of tapered openings.

Mask and mask manufacturing method

Provided is a mask manufacturing method which includes preparing a mask sheet and a frame, stretching the mask sheet, and fixing the stretched mask sheet to the frame, and forming cell openings in the mask sheet fixed to the frame.

METHOD FOR CREATING PATTERNS

The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least; a) a step of modifying at least one zone (411) of the layer (410) to be etched via ion implantation (430) vertically in line with said at least one pattern (421); b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends; b2) a step of modifying at least one zone (411″, 411″) of the layer (410) to be etched via ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;) c) a step of removing (461, 462) the modified zones (411, 411′, 41″), the removal comprising a step of etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.

DEPOSITION MASK, DEPOSITION DEVICE, AND DEPOSITION MASK MANUFACTURING METHOD

The present invention is directed to a method for manufacturing a vapor deposition mask (2) which includes a mask section (3) and a mask frame (4). The mask section (3) includes an alloy containing iron and nickel. The method includes a heat treatment step of carrying out heat treatment with respect to the mask section (3) in a state in which end parts of the mask section (3) are fixed to the mask frame (4) while tension is applied to the mask section (3).

COATING SYSTEM AND PROCESS

A coating system for coating a part (10), such as a turbine blade or vane, has a mask (14) positioned adjacent to a first portion (16) of the part (10) to be coated and a mechanism (30) for moving the mask (14) relative to the part (10). The mechanism (30) may be a gear mechanism or a magnetic mechanism.

METAL PLATE

The object of the present invention is to provide a metal plate capable of manufacturing a deposition mask in which dispersion of positions of through-holes is restrained. A thermal recovery rate is defined as parts per million of a difference a distance between to measurement points on a sample before a heat treatment and a distance therebetween after the heat treatment, relative to the distance therebetween before the heat treatment. In this case, an average value of the thermal recovery rates of the respective samples is not less than −10 ppm and not more than +10 ppm, and (2) a dispersion of the thermal recovery rates of the respective samples is not more than 20 ppm.