Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp.sup.2 to sp.sup.3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.

A coated cylinder liner 20 comprises a wear resistant layer 22, such as a DLC coating, and a metallic adhesive layer 24, such as chromium or titanium, deposited on an inner surface 26 thereof. The layers 22, 24 each have a thickness t.sub.w, t.sub.n varying by not more than 5% along at least 70% of the length of the inner surface 26. The metallic adhesive layer 24 is deposited by sputtering a consumable metallic electrode 28 onto the inner surface 26. The sputtering can be magnetron sputtering. The consumable metallic electrode 28 can include a hollow opening 40 with orifices 50 for providing a carrier gas into the deposition chamber 52. In addition, the inner surface 26 of the cylinder liner 20 can provide the deposition chamber 52 by sealing a first opening 36 and second opening 38 of the cylinder liner 20.

A device for separating analytes is disclosed. The device has a sample injector, sample injection needle, sample reservoir container in communication with the sample injector, chromatography column downstream of the sample injector, and fluid conduits connecting the sample injector and the column. The interior surfaces of the fluid conduits, sample injector, sample reservoir container, and column form a flow path having wetted surfaces. A portion of the wetted surfaces of the flow path are coated with an alkylsilyl coating that is inert to at least one of the analytes. The alkylsilyl coating has the Formula I: ##STR00001##
R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are each independently selected from (C.sub.1-C.sub.6)alkoxy, —NH(C.sub.1-C.sub.6)alkyl, —N((C.sub.1-C.sub.6)alkyl).sub.2, OH, OR.sup.A, and halo. R.sup.A represents a point of attachment to the interior surfaces of the fluidic system. At least one of R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 is OR.sup.A. X is (C.sub.1-C.sub.20)alkyl, —O[(CH.sub.2).sub.2O].sub.1-20—, —(C.sub.1-C.sub.10)[NH(CO)NH(C.sub.1-C.sub.10)].sub.1-20—, or —(C.sub.1-C.sub.10)[alkylphenyl(C.sub.1-C.sub.10)alkyl].sub.1-20-.

Methods and apparatus for processing a substrate are provided. For example, a method includes sputtering a material from a target in a PVD chamber to form a material layer on a layer comprising a feature of the substrate, the feature having an opening width defined by a first sidewall and a second sidewall, the material layer having a greater lateral thickness at the top surface of the layer than a thickness on the first sidewall or the second sidewall within the feature, depositing additional material on the layer by biasing the layer with an RF bias at a low power, etching the material layer from the layer by biasing the layer with an RF bias at a high-power, and repeatedly alternating between the low power and the high-power at a predetermined frequency.

A transparent polymer film for light redirection includes a carrier layer and a structured layer in optical contact with each other. The structured layer has a multitude of curved metallic micromirrors, which are parallel to each other and encapsulated in a transparent material and separated by a periodicity distance (p) of 10 to 1000 micrometer parallel to the film surface. 50% or more of the micromirrors’ surfaces have a cross section, perpendicular to the film surface, in the form of elliptic arcs, whose radii are from the range 5 p to 25 p, and the micromirrors are arranged in a depth (d) perpendicular to the film surface from the range 1.6 p to 3.0 p, especially 2 p to 2.5 p. Glazings can be equipped with the film.

A substrate processing apparatus that processes a substrate using particles, includes a conveyance mechanism configured to convey the substrate along a conveyance surface, a particle source configured to emit particles, a rotation mechanism configured to make the particle source pivot about a rotation axis, and a movement mechanism configured to move the particle source such that a distance between the particle source and the conveyance surface is changed.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

A deposition system is provided capable of controlling an amount of a target material deposited on a substrate and/or direction of the target material that is deposited on the substrate. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, wherein a length of at least one of the plurality of hollow structures is adjustable.

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

The invention relates to a method for the production of materials. In particular the invention relates to nanostructured materials, and an apparatus and method for the production thereof. In accordance with the invention, nanostructured materials are produced by the subsequent steps of producing nanoparticles; transporting the nanoparticles into, and optionally through, a porous carrier by a gas flow; and depositing the nanoparticles onto the surface of said porous carrier in an essentially isotropic manner.