A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

A method of manufacturing an electronic component including a substrate is provided. The method includes generating a plasma remote from a sputter target, generating sputtered material from the sputter target using the plasma, and depositing the sputtered material on a substrate as a crystalline layer.

Examples disclosed herein relate to an apparatus and method of forming thin film layers on a substrate. A first piezoelectric material layer is deposited on the substrate in a first chamber. The first piezoelectric material layer is formed on the substrate while the substrate is at a first temperature. A second piezoelectric material layer is deposited on the first piezoelectric material layer after cooling the substrate to a second temperature. The second temperature is lower than the first temperature. The first piezoelectric material layer and the second piezoelectric material layer both comprise a first piezoelectric material.

The present invention provides a preparation method of a gallium nitride single crystal based on a ScAlMgO.sub.4 substrate, comprising following steps: (1) providing a ScAlMgO.sub.4 substrate; (2) growing a buffer layer on a surface of the ScAlMgO.sub.4 substrate; (3) annealing the buffer layer; (4) growing a GaN crystal on the buffer layer; (5) performing cooling, so that the GaN crystal is automatically peeled off from the ScAlMgO.sub.4 substrate. The present invention does not need to use a complex MOCVD process for GaN deposition and preprocessing to make a mask or a separation layer, which effectively reduces production costs; compared with traditional substrates such as sapphire, it has higher quality and a larger radius of curvature, and will not cause a problem of OFFCUT non-uniformity for growing GaN over 4 inches; finally, the present invention can realize continuous growth into a crystal bar with a thickness of more than 5 mm, which further reduces the costs.

A surface-coated cutting tool comprises a tool substrate comprising a cBN sinter and a hard coating layer including a lower sublayer α and an upper sublayer β on the surface of the cutting edge; wherein α satisfies (Al.sub.1-xTi.sub.x)N (0.40≤x≤0.60); β satisfies (Al.sub.1-y-zTi.sub.yB.sub.z)N (0.40≤y≤0.60 and 0.01≤z≤0.10); in the sublayer β, the variation in the concentration of the B component is repeated; the average Bmaxav of the maxima in the concentration of the B component satisfies z<Bmaxav≤2.0×z, and the average Bminav of the minima in the concentration of the B component satisfies 0≤Bminav<z; and the average thickness tα of α and the average thickness tβ of β satisfy expression: 2.0≤<tβ/tα≤6.0; and the residual stress σ of the overall hard coating layer satisfies −2.0 GPa≤σ≤−0.5 GPa.

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

In some implementations, an optical interference filter includes a substrate; and a set of layers that are disposed on the substrate. The set of layers includes a first subset of layers, wherein the first subset of layers comprises an aluminum nitride (AlN) material; and a second subset of layers, wherein the second subset of layers comprises a hydrogenated silicon (Si:H) material.

In some implementations, an optical interference filter includes a substrate; and a set of layers that are disposed on the substrate. The set of layers includes a first subset of layers, wherein the first subset of layers comprises an aluminum nitride (AlN) material, and wherein a stress of the first subset of layers is between −1000 and 800 megapascals; and a second subset of layers, wherein the second subset of layers comprises at least one other material.

A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.

A nitride laminate, in which contamination in the nitride layer is suppressed and crystallinity is improved, is provided. A nitride laminate includes a polymer substrate, and a nitride layer provided on at least one of the surfaces of the polymer substrate. The nitride layer has a wurtzite crystal structure. The atomic proportion of oxygen in the nitride layer is 2.5 atm. % or less, and the atomic proportion of hydrogen in the nitride layer is 2.0 atm. % or less. The FWHM of the X-ray rocking curve of the nitride layer is 8 degree or less.