The present disclosure belongs to the technical field of functional films, and in particular relates to a self-lubricating film over wide temperature ranges in vacuum and a preparation method and use thereof. The present disclosure provides a self-lubricating film over wide temperature ranges in vacuum, including: a bonding layer, a transition layer and a lubricating layer laminated in sequence, wherein the bonding layer has a chemical composition of Ti; the transition layer has a chemical composition of Ti and TiB.sub.2; the lubricating layer has a chemical composition of Ti, TiB.sub.2 and MoS.sub.2. In the present disclosure, when the self-lubricating films over wide temperature ranges in vacuum are exposed to different temperatures, different components of Ti, TiB.sub.2 and MoS.sub.2 in the films may be correspondingly excited to enrich in frictional contact areas. The composition of each layer synergistically exerts a lubricating effect and improves the tribological properties and stability of the self-lubricating film over wide temperature ranges in vacuum in a vacuum over a wide temperature range.

The present invention relates to sensor arrays that are more accurate, more sensitive, and more specific with respect to the material that is detected and capable of detecting one or more materials over a wide range. Such sensor arrays can comprises sensors comprising pattern illumination-based annealed coated substrate and one or more functional molecules and process of using same. The method of designing and process of making the sensors for such sensor array yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film and to which one or more functional molecules can be attached to yield a sensor. Such processes when coupled with the design methods provided herein, allow for the rapid, efficient device prototyping, design change and evolution in the lab and on the production side.

The present invention provides methods to sputter deposit films comprising alkali metal compounds. At least one target comprising one or more alkali metal compounds and at least one metallic component is sputtered to form one or more corresponding sputtered films. The at least one target has an atomic ratio of the alkali metal compound to the at least one metallic component in the range from 15:85 to 85:15. The sputtered film(s) incorporating such alkali metal compounds are incorporated into a precursor structure also comprising one or more chalcogenide precursor films. The precursor structure is heated in the presence of at least one chalcogen to form a chalcogenide semiconductor. The resultant chalcogenide semiconductor comprises up to 2 atomic percent of alkali metal content, wherein at least a major portion of the alkali metal content of the resultant chalcogenide semiconductor is derived from the sputtered film(s) incorporating the alkali metal compound(s). The chalcogenide semiconductors are useful in microelectronic devices, including solar cells.

A three-dimensional all-solid-state lithium ion batteries including a cathode protection layer, the battery including: a cathode including a plurality of plates which are vertically disposed on a cathode current collector; a cathode protection layer disposed on a surfaces of the cathode and the cathode current collector; a solid state electrolyte layer disposed on the cathode protection layer; an anode disposed on the solid state electrolyte layer; and an anode current collector disposed on the anode, wherein the cathode protection layer is between the cathode and the solid state electrolyte layer, and wherein the solid state electrolyte layer is between the cathode protection layer and the anode.

The tantalum-doped molybdenum disulfide/tungsten disulfide (MoS.sub.2/WS.sub.2) multi-layer film includes a titanium transition layer, a titanium/tantalum/molybdenum disulfide/tungsten disulfide (Ti/Ta/MoS.sub.2/WS.sub.2) multi-layer gradient transition layer, and a tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer which are successively laminated in a thickness direction. The preparation method includes: successively depositing the titanium transition layer, the Ti/Ta/MoS.sub.2/WS.sub.2 multi-layer gradient transition layer, and the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer layer on the surface of a matrix by adopting a magnetron sputtering technology to obtain the tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film. The tantalum-doped MoS.sub.2/WS.sub.2 multi-layer film has good matrix binding strength, hardness and elasticity modulus, good friction and abrasion performance, good temperature self-adopting performance, heat and humidity resistance, and high temperature oxidization resistance under an atmospheric environment at different temperatures, and can meet the requirements of stable lubrication and long-life service of aerospace vehicles.

Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.

A sputtering target containing 20 at % to 40 at % of Te, 5 at % to 20 at % of Cu, 5 at % to 15 at % of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al—Te—Cu—Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.

The present invention relates to sensor arrays that are more accurate, more sensitive, and more specific with respect to the material that is detected and capable of detecting one or more materials over a wide range. Such sensor arrays can comprises sensors comprising pattern illumination-based annealed coated substrate and one or more functional molecules and process of using same. The method of designing and process of making the sensors for such sensor array yields components that can have one or more electronic and/or optical functionalities that are integrated on the same substrate or film and to which one or more functional molecules can be attached to yield a sensor. Such processes when coupled with the design methods provided herein, allow for the rapid, efficient device prototyping, design change and evolution in the lab and on the production side.

A sputtering target, which has a component composition including: 30.0-67.0 atomic % of Ga; and the Cu balance containing inevitable impurities, wherein the sputtering target is a sintered material having a structure in which θ phases made of Cu—Ga alloy are dispersed in a matrix of the γ phases made of Cu—Ga alloy, is provided.

A sputtering system and a sputtering method are provided. The sputtering system includes a first electrode, a magnet and a second electrode. The first electrode is an elongated tube having a first end and a second end downstream of the first end. The first end is configured to receive a gas flow and the second end is placed next to a substrate. The magnet surrounds at least a portion of the elongated tube and is configured to generate a magnetic field in a space within the elongated tube. The second electrode is disposed within the elongated tube. A voltage is configured to be applied between the first and second electrodes to generate an electric field between the first and second electrodes.