A method for growing a transition metal dichalcogenide layer involves arranging a substrate having a first transition metal contained pad is arranged in a chemical vapor deposition chamber. A chalcogen contained precursor is arranged upstream of the substrate in the chemical vapor deposition chamber. The chemical vapor deposition chamber is heated for a period of time during which a transition metal dichalcogenides layer, containing transition metal from the first transition metal contained pad and chalcogen from the chalcogen contained precursor, is formed in an area adjacent to the first transition metal contained pad.

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

The present invention relates to a method for obtaining a photovoltaic CZTS thin-film solar cell including arranging a precursor solution, preparing a substrate, and depositing said precursor solution on said substrate.

A high-performance optical surface includes: a substrate having a first surface and a second surface opposite to the first surface; a first anti-reflection (A/R) coating formed on the second surface of the substrate; a coated layer formed over the A/R coating on a surface of the A/R coating opposite to the stress compensation layer, where a surface of the coating layer opposite to the first A/R coating is diamond point turned or polished to improve finish; and a second A/R coating formed on the polished surface of the coating layer to formed the high-performance reflective surface.

A translucent or transparent film or sheet device shows angular-independent IR reflectance, which comprises a substrate (1) covered with a layer of a dielectric high refractive index material (4) containing a thin metallic layer (3) embedded in said material, and a further layer (5) of translucent or transparent material covering said layer (4) of dielectric high refractive index material, characterized in that the embedded metal layer (3) is periodically interrupted with a periodicity of 50 to 800 nm such that metal covers at least 70% of the substrate area. The device may advantageously be integrated into a window, a glass facade element or especially onto a photovoltaic (PV) device, where it reduces the fraction of IR radiation passing into the building, or reduces heat take-up and thus lowers the operating temperature and improves the efficiency of the PV cell.

Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.

An optical element (200), has a first surface configured to convey light, a second surface configured to convey light, an optical path between the first surface and the second surface, a filter coating (230) applied to the first surface, and a colour corrected anti-reflection (AR) coating (240) with colour correcting and antireflection characteristics applied to the second surface. The AR coating is configured according to an antireflective function to maximise photopic transmission and/or, integrated visual photopic transmission (IVPT) of the optical path. The second surface is disposed opposite the first surface, and the antireflective function is determined according to a daylight emission a I(λ), a transmission spectrum of the antireflection/colour corrective coating T(λ) and a thickness a d(λ), of the film for a specified wavelength.

The invention provides a quantum dot color film substrate, manufacturing method thereof and an LCD apparatus. The manufacturing method comprises forming an organic transparent photo-resist layer on transparent sub-pixel areas of a transparent substrate; forming a red quantum dot layer, a green quantum dot layer on corresponding red sub-pixel areas and green sub-pixel areas respectively by a sputter printing process using the organic transparent layer as stop walls to improve printing precision. The manufacturing method is simple, and requires less time and facility cost.

A method for vacuum coating a colorful film includes the following steps: pre-treating a substrate; cleaning an evaporation chamber; placing the substrate and evaporation sources; performing a pre-vacuuming; performing an ion cleaning; performing a fine vacuuming; performing evaporation operations; completing the evaporation operations. When performing evaporation operations, the first and the second evaporation materials are pre-melted; and then the evaporation operations are carried out alternately after pre-melting, with a total time of the evaporation operation of 1000-1200 seconds. The finished film has four layers, from the inside to the outside, the four layers are a first coating layer, a second coating layer, a third coating layer and a fourth coating layer; the first coating layer and the third coating layer have a same material, and the second coating layer and the fourth coating layer have another same material.

An article including a stack of layers including a high refractive index layer and a low refractive index layer; wherein at least one layer of the stack includes a wavelength selective absorbing material; and wherein the stack of layers has a transparent region with an edge at a wavelength in which light is absorbed by the wavelength selective absorbing material, and a reflection band with an edge at a wavelength in which light is reflected is disclosed. Compositions and optical devices including the article are also disclosed. Additionally, there is disclosed a method of making the article, the composition, and the optical device.