Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material 1 is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C.

A method of manufacturing high capacitance anode and cathode films of capacitors is revealed. Perform sputter deposition on a cathode aluminum foil in a vacuum chamber to form a cathode metal layer which is a titanium layer on a surface of the cathode aluminum foil. Then titanium continuously reacts with nitrogen to form cathode columnar crystal deposition on a surface of the cathode metal layer and get a cathode film. Perform sputter deposition on an anode aluminum foil in a vacuum chamber to form an anode metal layer which is a titanium layer on a surface of the anode aluminum foil. Then titanium continuously reacts with oxygen and nitrogen to form anode columnar crystal deposition on a surface of the anode metal layer and get an anode film. Next use the cathode and anode films with high capacitance to form cathode and anode electrodes of the capacitor.

Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula RO.sub.xN.sub.y, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′O.sub.xN.sub.y, wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 10.sup.8 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.

The present invention relates to a method for producing a multilayer film comprising aluminum, chromium, oxygen and nitrogen, in a vacuum coating chamber, the multilayer film comprising layers of type A and layers of type B deposited alternate one of each other, wherein during deposition of the multilayer film at least one target comprising aluminum and chromium is operated as cathode by means of a PVD technique and used in this manner as material source for supplying aluminum and chromium, and an oxygen gas flow and a nitrogen gas flow are introduced as reactive gases in the vacuum chamber for reacting with aluminum and chromium, thereby supplying oxygen and nitrogen for forming the multilayer film, characterized in that: —The A layers are deposited as oxynitride layers of Al—Cr—O—N by using nitrogen and oxygen as reactive gas at the same time, —The B layers are deposited as nitride layers of Al—Cr—N by reducing the oxygen gas flow and by increasing the nitrogen gas flow in order to use only nitrogen as reactive gas for the formation of the Al—Cr—N layer, and wherein the relation between oxygen content and nitrogen content in the multilayer film correspond to a ratio in atomic percentage having a value between and including 1.8 and 4.

Disclosed in the embodiments of the present application are a microelectrode of a gene sequencing chip, a manufacturing method therefor, and a gene sequencing chip. The microelectrode comprises a substrate, a current collector layer formed on the substrate, and an electrode layer formed on the current collector layer; the current collector layer comprises a transition metal thin film or a nitride thin film thereof or a composite thin film of a transition metal and nitride thereof, and the electrode layer comprises a nitrogen oxide thin film of the transition metal, which is formed on the transition metal thin film or the nitride thin film thereof or the composite thin film of the transition metal and nitride thereof The embodiments of the present application improve the per unit area voltage driving capabilities of a microelectrode in a gene sequencing chip, can meet requirements for an ultra-high number of cycles, and improve the throughput and stability of a gene sequencing chip.

Disclosed herein are coated articles which may include a substrate and an optical coating that includes one or more layers of deposited material. At least a portion of the optical coating may include a residual compressive stress of more than 100 MPa. The coated article may include a strain-to-failure of 0.4% or more as measured by a Ring-on-Ring Tensile Testing Procedure. The optical coating may include a maximum hardness of 8 GPa or more and an average photopic transmission of 50% or greater.

A method of manufacturing a crystalline layer of material on a surface, the crystalline layer including lithium, at least one transition metal and at least one counter-ion. The method includes the following steps: generating a plasma using a remote plasma generator, plasma sputtering material from a first target including lithium onto a surface of or supported by a substrate, there being at least a first plume corresponding to trajectories of particles from the first target onto the surface, and plasma sputtering material from a second target including at least one transition metal onto the surface, there being at least a second plume corresponding to trajectories of particles from the second target onto the surface. The first target is positioned to be non-parallel with the second target, the first plume and the second plume converge at a region proximate to the surface of or supported by the substrate, and the crystalline layer is formed on the surface at the region.

A wire grid polarizer (WGP) can have a conformal-coating to protect the WGP from at least one of the following: corrosion, dust, and damage due to tensile forces in a liquid on the WGP. The conformal-coating can include a silane conformal-coating with chemical formula (1), chemical formula (2), or combinations thereof: ##STR00001##
A method of applying a conformal-coating over a WGP can include exposing the WGP to Si(R.sup.1).sub.d(R.sup.2).sub.e(R.sup.3).sub.g. In the above WGP and method, X can be a bond to the ribs; each R.sup.1 can be a hydrophobic group; each R.sup.3, if any, can be any chemical element or group; d can be 1, 2, or 3, e can be 1, 2, or 3, g can be 0, 1, or 2, and d+e+g=4; R.sup.2 can be a silane-reactive-group; and each R.sup.6 can be an alkyl group, an aryl group, or combinations thereof.

A display substrate includes a supporting material layer having at least one flexible material sub-layer and at least one blocking sub-layer, which can be alternately and successively arranged in layers. One blocking sub-layer is at a topmost sub-layer of the supporting material layer, and is provided with a well, located in a display area and configured for accommodating a display component therewithin. One or more of the at least one flexible material sub-layer or the at least one blocking sub-layer is configured as a target material layer. The target material layer includes a planar portion and a protruding portion over the planar portion. An orthographic projection of the protruding portion on a bottom surface of the supporting material layer forms a ring-like structure having an opening that covers an orthographic projection of a bottom surface of the well on the bottom surface of the supporting material layer.