The present embodiments provide a transparent electrode having a laminate structure of: a metal oxide layer having an amorphous structure and electroconductivity, and a metal nanowire layer; and further comprising an auxiliary metal wiring. The auxiliary metal wiring covers a part of the metal nanowire layer or of the metal oxide layer, and is connected to the metal nanowire layer.

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.

The invention relates to a method of forming a coating for deposition to non-metallic surfaces, comprising the steps of applying (120) a semiconductor material to a substrate to form a semiconductor material layer and simultaneously or subsequently applying (140) metallic material or additional semiconductor material, wherein the metallic material or additional semiconductor material is introduced into the semiconductor material layer in a targeted manner to tailor the optical properties of the coating.

Provided is a coloring pattern structure. The coloring pattern structure includes: a substrate; a light-transmitting dielectric layer formed on at least one surface of the substrate; and a composite material layer disposed on an upper surface of the light-transmitting dielectric layer and formed of a metal and a first material not having a thermodynamic solid solubility in the metal, wherein the metal included in the composite material layer has a pattern coated only on portions of the upper surface of the light-transmitting dielectric layer, and the first material is coated on the remaining area where the metal is not coated.

A versatile high throughput deposition apparatus includes a process chamber and a workpiece platform in the process chamber. The workpiece platform can hold a plurality of workpieces around a center region and to rotate the plurality of workpieces around the center region. Each of the plurality of workpieces includes a deposition surface facing the center region. A gas distribution system can distribute a vapor gas in the center region of the process chamber to deposit a material on the deposition surfaces on the plurality of workpieces. A magnetron apparatus can form a closed-loop magnetic field near the plurality of workpieces. The plurality of workpieces can be electrically biased to produce a plasma near the deposition surfaces on the plurality of workpieces.

The present invention relates to an antimicrobial plastic film and a winding coating method, the antimicrobial plastic film includes a plastic film main part, wherein a surface of said plastic film main part is coated with an antimicrobial coating, the antimicrobial coating includes a bonding layer, a carrier layer, a first antimicrobial layer and a second antimicrobial layer, the winding coating method includes the steps of vacuum treatment , applying a bonding layer, applying a carrier layer, applying a first antimicrobial layer, and applying a second antimicrobial layer

In one embodiment, this hard mask for plasma etching is formed on a silicon-containing film. The hard mask is an amorphous film, and contains tungsten and silicon. The ratio of the concentration of tungsten and the concentration of silicon in the surface of the hard mask can be within the range between a ratio specifying that the concentration of tungsten is 35 at % and the concentration of silicon is 65 at % and a ratio specifying that the concentration of tungsten is 50 at % and the concentration of silicon is 50 at %.

An article includes a substrate, an intermediate coating on the substrate, and an environmental barrier coating (EBC) on the intermediate coating. The substrate includes a ceramic, ceramic matrix composite (CMC), or superalloy. The EBC includes a rare earth disilicate. When the intermediate coating is at an initial state, such as prior to exposure to an oxidating environment, the intermediate coating includes a bond coat on the substrate and a reactive layer on the bond coat. The bond coat includes silicon, while the reactive layer includes a rare earth monosilicate or rare earth oxide. In response to oxidation of a portion of the silicon of the bond coat to form silicon dioxide, a portion of the rare earth monosilicate or rare earth oxide of the reactive layer is configured to react with at least a portion of the silicon dioxide to form a converted layer that includes a rare earth disilicate.

A workpiece having a coating, said coating comprising at least one Ti.sub.XSi.sub.1-xN layer, characterized in that x≦0.85 and the Ti.sub.xSi.sub.1-xN layer contains nanocrystals, the nanocrystals present having an average grain size of not more than 15 nm and having a (200) texture. The invention also relates to a process for producing the aforementioned layer, characterized in that the layer is produced using a sputtering process, in which current densities of greater than 0.2 A/cm.sup.2 arise on the target surface of the sputtering target, and the target is a Ti.sub.XSi.sub.1-xN target, where x≦0.85. An intermediate layer containing TiAlN or CrAlN is preferably provided between the Ti.sub.xSi.sub.1-xN layer and the substrate body of the workpiece.

An investment casting system includes a core having at least one fine detail, a shell positioned relative to said core, and a strengthening coating applied at least to the at least one fine detail.