C23C14/10

BLACK LIGHT SHIELDING MEMBER
20230046475 · 2023-02-16 ·

Provided is a black light-shielding member, which has an excellent effect of anti-reflection that based on low glossiness and has a high blackness. A black light-shielding member including a substrate film, a resin-made light-shielding layer having a concave-convex shape formed on at least one surface of the substrate film, and a blackened layer formed on the resin-made light-shielding layer is produced. By adjusting an arithmetic mean surface roughness Ra of the surface on which the light-shielding layer and the blackened layer are formed to be 0.25 μm or more, and the maximum thickness of the blackened layer is less than the said Ra, a blackness with an L value of 12 or less is achieved.

CHEMICAL BONDING METHOD, PACKAGE-TYPE ELECTRONIC COMPONENT, AND HYBRID BONDING METHOD FOR ELECTRONIC DEVICE

Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

CHEMICAL BONDING METHOD, PACKAGE-TYPE ELECTRONIC COMPONENT, AND HYBRID BONDING METHOD FOR ELECTRONIC DEVICE

Substrates that are bonding targets are bonded in ambient atmosphere via bonding films, including oxides, formed on bonding faces of the substrates. The bonding films, which are metal or semiconductor thin films formed by vacuum film deposition and at least the surfaces of which are oxidized, are formed into the respective smooth faces of two substrates having the smooth faces that serve as the bonding faces. The bonding films are exposed to a space that contains moisture, and the two substrates are overlapped in the ambient atmosphere such that the surfaces of the bonding films are made to be hydrophilic and the surfaces of the bonding films contact one another. Through this, a chemical bond is generated at the bonded interface, and thereby the two substrates are bonded together in the ambient atmosphere. The bonding strength γ can be improved by heating the bonded substrates at a temperature.

METHOD

The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element; and co-depositing the component elements from the vapour sources onto a substrate wherein the component elements react on the substrate to form the amorphous compound; wherein the amorphous lithium borosilicate or doped lithium borosilicate ompound has a lithium content in the range 40-65 atomic %, based on the combined atomic percentages of lithium, boron and silicon.

METHOD

The present invention provides a vapour deposition method for preparing an amorphous lithium borosilicate or doped lithium borosilicate compound, the method comprising: providing a vapour source of each component element of the compound, wherein the vapour sources comprise at least a source of lithium, a source of oxygen, a source of boron, and a source of silicon, and, optionally, a source of at least one dopant element; delivering a flow of said lithium, said oxygen, said boron and said silicon, and, optionally, said dopant element; and co-depositing the component elements from the vapour sources onto a substrate wherein the component elements react on the substrate to form the amorphous compound; wherein the amorphous lithium borosilicate or doped lithium borosilicate ompound has a lithium content in the range 40-65 atomic %, based on the combined atomic percentages of lithium, boron and silicon.

STRUCTURE AND MANUFACTURING METHOD OF SURFACE ACOUSTIC WAVE FILTER WITH BACK ELECTRODE OF PIEZOELECTRIC LAYER
20230008048 · 2023-01-12 ·

A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.

STRUCTURE AND MANUFACTURING METHOD OF SURFACE ACOUSTIC WAVE FILTER WITH BACK ELECTRODE OF PIEZOELECTRIC LAYER
20230008048 · 2023-01-12 ·

A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a back electrode on a first portion of the piezoelectric substrate, forming a first dielectric layer on the first portion of the piezoelectric substrate, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer formed with the trench, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming an interdigital transducer (IDT) on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity below the back electrode.

METHOD FOR APPLYING A METAL PROTECTIVE COATING TO A SURFACE OF A STEEL PRODUCT

A method for applying a metallic protective coating to a surface of a steel product, where another surface is to remain free from the metallic protective coating, may involve applying the metallic protective coating by hot dip coating in a hot dip coating bath. A preliminary coating may be applied to the surface that is to remain free from the metallic protective coating prior to the hot dip coating. The preliminary coating may include SiO.sub.2 and may prevent the metallic protective coating from adhering to the intended surface during hot dip coating. Thus one surface of a steel product may be provided with a metallic protective coating, and another surface of the steel product may be kept free from the protective coating, all with a minimum of cost and complexity and with optimized resource economics. Further, the preliminary coating, deposited from a gas phase to that surface of the steel product that is to be kept free from the metallic protective coating, may be a layer that includes amorphous silicon dioxide and has a layer thickness of 0.5-500 nm.”

METHOD FOR APPLYING A METAL PROTECTIVE COATING TO A SURFACE OF A STEEL PRODUCT

A method for applying a metallic protective coating to a surface of a steel product, where another surface is to remain free from the metallic protective coating, may involve applying the metallic protective coating by hot dip coating in a hot dip coating bath. A preliminary coating may be applied to the surface that is to remain free from the metallic protective coating prior to the hot dip coating. The preliminary coating may include SiO.sub.2 and may prevent the metallic protective coating from adhering to the intended surface during hot dip coating. Thus one surface of a steel product may be provided with a metallic protective coating, and another surface of the steel product may be kept free from the protective coating, all with a minimum of cost and complexity and with optimized resource economics. Further, the preliminary coating, deposited from a gas phase to that surface of the steel product that is to be kept free from the metallic protective coating, may be a layer that includes amorphous silicon dioxide and has a layer thickness of 0.5-500 nm.”

COATINGS OF NON-PLANAR SUBSTRATES AND METHODS FOR THE PRODUCTION THEREOF

A coated article may comprise a substrate and an optical coating. The substrate may have a major surface comprising a first portion and a second portion. A first direction that is normal to the first portion of the major surface may not be equal to a second direction that is normal to the second portion of the major surface. The optical coating may be disposed on at least the first portion and the second portion of the major surface. The coated article may exhibit at the first portion of the substrate and at the second portion of the substrate hardness of about 8 GPa or greater at an indentation depth of about 50 nm or greater as measured on the anti-reflective surface by a Berkovich Indenter Hardness Test.