The PVD apparatus includes a chamber, a plurality of stages, a first target holder, a power supply mechanism, and a shield. The plurality of stages are provided inside the chamber, and each of the plurality of stages is configured to place at least one substrate on an upper surface thereof. The first target holder is configured to hold at least one target provided for one stage, the target being exposed to a space inside the chamber. The power supply mechanism supplies power to the target via the first target holder. The shield is provided inside the chamber and a part of the shield is disposed between a first stage and a second stage in the plurality of stages, and between a first processing space on the first stage and a second processing space on the second stage.

Thermoregulated multilayer material characterized in that it comprises at least one substrate and one thermoregulated layer, said thermoregulated multilayer material having: for λ radiation of between 0.25 and 2 μm, an absorption coefficient αm≥0.8; and, for incident λ radiation of between 7.5 and 10 μm, a reflection coefficient ρm: ρm≥0.85, when the temperature T of said multilayer material 1 is ≤100° C.; ρm between 0.3 and 0.85, when the temperature T of said multilayer material is between 0 and 400° C.

The invention relates to the manufacturing method of high performance electro-chromic devices containing transition metal oxide based compounds, wherein it comprises the steps of enlarging of the metal contact with Pt (Platinum) (1) sputtering method on one edge of the 80-150 nm thick Indium-Tin oxide alloy (ITO) (2), which was previously enlarged on the glass (3) by the sputter method, growing vertical nano-wall structures at 15-25 mTorr, 300-500° C. substrate temperature and at 3-45 minutes intervals on glass (3) with sputter method, by using transition metal chalcogen targets on previously enlarged ITO (2) with a thickness of 80-150 nm, oxidizing the grown structures in the oxidizing furnace for 10-60 minutes under oxygen gas in the temperature range 300-450° C., preparing the electro-chromic device by placing a counter glass/ITO (80-150 nm) in propylene carbonate (PC) to face 1 Mole/Liter Lithium perchlorate (LiClO4) ion-conducting electrolyte (6) with a 0.5-1 mm distance between them and closing it.

In an aspect, a mixed metal oxide comprises or consists essentially of: a mixture comprises or consisting essentially of 0.30 to 0.69 parts by mole Mg, 0.20 to 0.69 parts by mole Zn, 0.01 to 0.30 parts by mole of a third element selected from Al and Ga, and, either, when the third element is Al, 0.00 to 0.31 parts by mole of other elements selected from metals and metalloids, or, when the third element is Ga, 0.00 to 0.15 parts by mole of other elements selected from metals and metalloids, wherein the sum of all parts by mole of Mg, Zn, the third element, and the other elements amounts to 1.00, wherein the amount in parts by mole of the other elements is lower than the amount in parts by mole of Mg and is lower than the amount in parts by mole of Zn; oxygen; and less than 0.01 parts by mole of non-metallic and non-metalloid impurities.

A film forming apparatus has a process chamber and a processing unit provided in the process chamber and forming adhesive film. The surface of the inner walls of the process chamber is formed of a material having a large getter effect on gas or water (H.sub.2O) remaining in the process chamber.

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same.

There are provided a ferroelectric thin film represented by a chemical formula M1.sub.1-XM2.sub.XN, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

A semiconductor manufacturing apparatus for forming a film on a substrate by sputtering a target based on a recipe for performing film formation is provided. The apparatus comprises: a storage device configured to store an adjustment coefficient for adjusting a film quality of the formed film based on the recipe; a monitoring device configured to monitor a used amount of the target; a compensation device configured to calculate a compensation value for compensating at least one of process conditions set in the recipe by inputting the used amount of the target monitored by the monitoring device and the adjustment coefficient into a calculation formula; and a recipe execution device configured to execute film formation based on the recipe and the compensation value.

An optical device includes, in sequence, a surface formed of a metal oxide, a samarium oxide-containing layer in contact with the surface formed of a metal oxide, and a magnesium fluoride-containing layer in contact with the samarium oxide-containing layer so as to suppress optical absorption resulting from high-rate sputter deposition of a magnesium fluoride-containing layer on a surface formed of a metal oxide.

A method of manufacturing an electronic component including a substrate is provided. The method includes generating a plasma remote from a sputter target, generating sputtered material from the sputter target using the plasma, and depositing the sputtered material on a substrate as a crystalline layer.

In a general aspect, a ceramic thin film with nanotwinned regions at a tunable volume fraction is manufactured. In some aspects, a method for manufacturing a ceramic thin film on a surface of a substrate in an evacuated chamber is disclosed. The ceramic thin film includes crystalline grains; and each of the crystalline grains includes one or more nanotwinned regions. The one or more nanotwinned regions have a volume fraction in a range of 30-80% of the ceramic thin film. The ceramic thin film comprises titanium, nitrogen, and boron. A plurality of targets including a plurality of sputtering materials is prepared. A gas atmosphere in the evacuated chamber is formed. Electric power is supplied to the plurality of targets to cause co-sputtering of the plurality of sputtering materials to form the ceramic thin film with the one or more nanotwinned regions.