Inventive techniques for forming unique compositions of matter are disclosed, as well as various advantageous physical characteristics, and associated properties of the resultant materials. In particular, metal(s) (including various alloys, such as Inconel superalloys) are characterized by having carbon disposed within the metal lattice structure thereof. The carbon is primarily, or entirely, present at interstitial sites of the metal lattice, and may be present in amounts ranging from about 15 wt % to about 90 wt %. The carbon, moreover, forms non-polar covalent bonds with both metal atoms of the lattice and other carbon atoms present in the lattice. This facilitates substantially homogeneous dispersal of the carbon throughout the resultant material, conveying unique and advantageous properties such as strength-to-weight ratio, density, mechanical toughness, sheer strength, flex strength, hardness, anti-corrosiveness, electrical and/or thermal conductivity, etc. as described herein. In some approaches, the composition of matter may be powderized, or the powder may be pelletized.

Embodiments of the present disclosure provide for substrates having an oxide shell layer (e.g., a silica shell layer), methods of making an oxide shell layer, and the like.

A method for coating a vaporizing substrate includes depositing a film coating 12 on at least a part of a substrate 10 during the time when the substrate undergoes phase transition from essentially liquid phase to gaseous phase, where the substrate includes a chemical substance that participates in chemical deposition reaction(s) in gaseous phase, the gaseous species 101 formed upon vaporizing at least the portion of the substrate material, when undergoing chemical deposition reactions in gaseous phase, produce particulate 11 that forms at least one coating layer to produce the film coating 12.

A continuous method for manufacturing graphene films using a metal substrate, wherein a first surface of the metal substrate is heated such that a top layer of the first surface melts to form a molten metal layer, and devices for carrying out the same.

A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.

An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

A method and a device for coating a vaporizing substrate are provided, wherein a film coating 12 is deposited on at least a part of a substrate 10 during the time when the substrate undergoes phase transition from essentially liquid phase to gaseous phase. Gaseous species 101 formed upon vaporizing at least the portion of the substrate material, when undergoing chemical deposition reactions in gaseous phase, produce particulate 11 that forms at least one coating layer to produce the film coating 12.

An assembly for the deposition of silicon nanostructures comprising a deposition chamber, which is defined by a side wall and by two end walls; a microwave generator, which is adapted to generate microwaves inside the deposition chamber; an electromagnetic termination wall, made of a conductor material and reflecting the microwave radiation, which is such as to create a termination for a TE-mode waveguide and is housed inside the deposition chamber; and a substrate-carrier support, which is made of a dielectric material and on which the substrate is housed on which to perform the growth of silicon nanostructures. The substrate-carrier support is arranged inside the deposition chamber above the termination wall.

The present invention provides a process for producing a two-dimensional nanomaterial, the process comprising forming the two-dimensional nanomaterial on a surface of a substrate by CVD, wherein said surface is a liquid surface which comprises a molten eutectic compound. Substrates and substrate precursors for use in said process are also provided.

A chemical vapor deposition method comprises flowing a carrier liquid through a reactor. A fluid comprising one or more reactants is introduced into the carrier liquid. The fluid is at a first temperature and first pressure and is sufficiently immiscible in the carrier liquid so as to form a plurality of microreactors suspended in the carrier liquid. Each of the microreactors comprise a discrete volume of the fluid and have a surface boundary defined by an interface of the fluid with the carrier liquid. The fluid is heated and optionally pressurized to a second temperature and second pressure at which a chemical vapor deposition reaction occurs within the microreactors to form a plurality of chemical vapor deposition products. The plurality of chemical vapor deposition products are separated from the carrier liquid. A system for carrying out the method of the present disclosure is also taught.