Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.

A manufacturing method is provided. During this method, a preform component is provided for a turbine engine. The preform component includes a substrate. A meter section of a cooling aperture is formed in the substrate. An internal coating is applied onto a surface of the meter section. An external coating is applied over the substrate. A diffuser section of the cooling aperture is formed in the external coating and the substrate to provide the cooling aperture.

A method for manufacturing a shallow trench isolation structure includes: providing a substrate and forming multiple first trenches in the substrate, in which a cross-sectional width of each first trench increases downward along a vertical direction; forming a continuous first isolation layer on a top of the substrate and inner sides of the multiple first trenches by a deposition process, in which parts of the first isolation layer located in the first trenches form second trenches, and in which a cross-sectional width of each second trench remains constant downward along the vertical direction; and forming a continuous second isolation layer on a surface of the first isolation layer by an ISSG process, in which parts of the second isolation layer located in the second trenches completely fill up the second trenches.

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

An object of the invention is to provide a coated cutting tool whose tool life can be extended by having excellent wear resistance and fracture resistance. The coated cutting tool includes: a substrate; and a coating layer formed on a surface of the substrate, in which the coating layer includes a lower layer, an intermediate layer, and an upper layer in this order from a substrate side to a surface side of the coating layer, the lower layer includes one or more Ti compound layers formed of a specific Ti compound, the intermediate layer contains TiCNO, TiCO, or TiAlCNO, the upper layer contains α-type Al.sub.2O.sub.3, an average thickness of the lower layer is 2.0 μm or more and 8.0 μm or less, an average thickness of the intermediate layer is 0.5 μm or more and 2.0 μm or less and is 10% or more and 20% or less of an average thickness of the entire coating layer, an average thickness of the upper layer is 0.8 μm or more and 6.0 μm or less, and in the intermediate layer, a ratio of a length of CSL grain boundaries and a ratio of a length of Σ3 grain boundaries are in specific ranges.

The instant disclosure is related to the growth of carbon-based nanostructures and associated systems and products. Certain embodiments are related to carbon-based nanostructure growth using active growth materials comprises at least two components that are capable of forming a eutectic composition with each other. In some embodiments, the growth of carbon-based nanostructures is performed using active growth materials comprising at least two types of cations.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A surface treatment agent including a compound represented by the general formula HO—P(═O)R.sup.1R.sup.2 in which R.sup.1 and R.sup.2 are each independently bonded to the phosphorus atom and are each independently a hydrogen atom, an alkyl group, a fluorinated alkyl group, or an aromatic hydrocarbon group which may have a substituent, provided that R.sup.1 and R.sup.2 are not hydrogen atoms at the same time, and an organic solvent.

A method for forming a doped layer is disclosed. The doped layer may be used in a NMOS or a silicon germanium application. The doped layer may be created using an n-type halide species in a n-type dopant application, for example.

The invention provides process for producing a stable Si or Ge electrode structure comprising cycling a Si or Ge nanowire electrode until a structure of the Si nanowires form a continuous porous network of Si or Ge ligaments.