The fine metal mask provided in the present disclosure includes at least one mask pattern portion, and at least one protective portion that is disposed on and connected with at least one side edge of the at least one mask pattern portion, wherein a thickness of the at least one protective portion is less than a thickness of the at least one mask pattern portion.

An exclusion ring for semiconductor wafer processing includes an outer circumferential segment having a first thickness and an inner circumferential segment having a second thickness, with the first thickness being greater than the second thickness. The top surface of an inner circumferential segment and the top surface of the outer circumferential segment define a common top surface for the exclusion ring. A plurality of flow paths is formed within the outer circumferential segment, with each of the flow paths extending radially through the plurality of flow paths provides for exhaust of a wafer edge gas from the pocket where a wafer has an edge thereof disposed below part of the inner circumferential portion. The exhausting of the wafer edge gas from the pocket prevents up-and-down movement of the exclusion ring when bowed wafers are processed.

Localized stresses can be modulated in a film deposited on a bowed semiconductor substrate by selectively and locally curing the film by ultraviolet (UV) radiation. A bowed semiconductor substrate can be asymmetrically bowed. A UV-curable film is deposited on the front side or the backside of the bowed semiconductor substrate. A mask is provided between the UV-curable film and a UV source, where openings in the mask are patterned to selectively define exposed regions and non-exposed regions of the UV-curable film. Exposed regions of the UV-curable film modulate localized stresses to mitigate bowing in the bowed semiconductor substrate.

A film formation method includes: preparing a substrate including, on its surface, a first region in which a first material is exposed and a second region in which a second material different from the first material is exposed; selectively forming a self-assembled monolayer in the first region, among the first region and the second region; and forming a desired target film in the second region, among the first region and the second region, by using the self-assembled monolayer formed in the first region, wherein the selectively forming the self-assembled monolayer includes: selectively forming the self-assembled monolayer in the first region by using a first processing liquid including a first raw material of the self-assembled monolayer; and modifying the self-assembled monolayer, by using a second processing liquid including a second raw material of the self-assembled monolayer at a concentration different from a concentration of the first processing liquid.

The present invention is directed to a method for manufacturing a vapor deposition mask (2) which includes a mask section (3) and a mask frame (4). The mask section (3) includes an alloy containing iron and nickel. The method includes a heat treatment step of carrying out heat treatment with respect to the mask section (3) in a state in which end parts of the mask section (3) are fixed to the mask frame (4) while tension is applied to the mask section (3).

A mask comprises a mask substrate having a protruding section in an opening end surface of an opening, having an acute angle defined by θ1 and θ2 of no more than 43°, and having a height from a film-formation surface on the substrate to a tip section of the protruding section greater than the thickness of the film to be formed on the film-formation surface.

Electrically conductive masking tapes include an electrically conductive backing and an electrically conductive pressure sensitive adhesive layer. The pressure sensitive adhesive contains an acrylate-based copolymeric matrix, a crosslinker, an electrically conductive filler, and at least one antioxidant. The acrylate-based copolymeric matrix is the reaction product of a polymerizable mixture including at least one first alkyl(meth)acrylate monomer with a homopolymer Tg of less than −50° C., and at least one hydroxyl-functional alkyl(meth)acrylate with a homopolymer Tg of less than −10° C. The electrically conductive tape is capable of being laminated to and cleanly removed from a substrate surface, after being subjected to harsh conditions such as plasma vapor deposition conditions.

A mask assembly (100) includes a mask frame (102) and a mask screen (104), both of the mask frame (102) and the mask screen (104) made of a metallic material, and a metal coating (125) disposed on exposed surfaces of one or both of the mask frame (102) and the mask screen (104).

A method of depositing a material on one of two, but not both, sidewalls of a raised structure formed on a substrate includes tilting a normal of the substrate away from a source of the deposition material or tilting the source of the deposition material away from the normal of the substrate. The method may be implemented by a plasma-enhanced chemical vapor deposition (PECVD) technique.

The present disclosure provides a fine metal mask and a method for manufacturing the same, a mask assembly and a display substrate. The fine metal mask includes: a mask pattern region and a non-mask region disposed at a periphery of the mask pattern region. The mask pattern region includes at least one first grid pattern region, a barrier ring pattern disposed around the first grid pattern region, and a second grid pattern region disposed at an outer periphery of the barrier ring pattern.