An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.

Provided is a molybdenum oxychloride characterized in having a purity of 99.9995 wt % or higher. Additionally provided is a manufacturing method of a molybdenum oxychloride including the steps of reacting MoO.sub.3 and Cl.sub.2 and synthesizing the molybdenum oxychloride in a reaction chamber, and cooling the synthesized molybdenum oxychloride gas and precipitating the molybdenum oxychloride in a recovery chamber, wherein an impurity trap is provided between the reaction chamber and the recovery chamber, and impurities are removed with the impurity trap. An object of the present invention is to provide a high-purity molybdenum oxychloride and a manufacturing method therefor.

Provided is a molybdenum oxychloride characterized in having a purity of 99.9995 wt % or higher. Additionally provided is a manufacturing method of a molybdenum oxychloride including the steps of reacting MoO.sub.3 and Cl.sub.2 and synthesizing the molybdenum oxychloride in a reaction chamber, and cooling the synthesized molybdenum oxychloride gas and precipitating the molybdenum oxychloride in a recovery chamber, wherein an impurity trap is provided between the reaction chamber and the recovery chamber, and impurities are removed with the impurity trap. An object of the present invention is to provide a high-purity molybdenum oxychloride and a manufacturing method therefor.

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

Methods and systems for cleaning and treating a surface of a substrate. An exemplary method includes providing a substrate comprising a gap comprising a metal oxide and a dielectric material within a reaction chamber, and using a thermal process to selectively remove the metal oxide. Exemplary methods can further include a step of depositing a metal-containing material within the gap to at least partially fill the gap and using a direct plasma and treating a surface of the metal-containing material to remove oxygen from the surface of the metal-containing material. Exemplary systems can perform the methods.

The present disclosure relates to methods and apparatuses for depositing a conductive layer on another conductive layer of a substrate. The method comprises providing the substrate comprising the first conductive layer in a reaction chamber, providing a cleaning agent comprising a metal halide into the reaction chamber in a vapor phase to clean the substrate and providing a second material precursor into the reaction chamber in a vapor phase to deposit the second conductive layer on the first conductive layer. The disclosure further relates to a method of forming a semiconductor structure and to a semiconductor processing assembly.

The present disclosure relates to methods and apparatuses for depositing a conductive layer on another conductive layer of a substrate. The method comprises providing the substrate comprising the first conductive layer in a reaction chamber, providing a cleaning agent comprising a metal halide into the reaction chamber in a vapor phase to clean the substrate and providing a second material precursor into the reaction chamber in a vapor phase to deposit the second conductive layer on the first conductive layer. The disclosure further relates to a method of forming a semiconductor structure and to a semiconductor processing assembly.