A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

A vapor phase epitaxy method of growing a III-V layer with a doping that changes from a first conductivity type to a second conductivity type on a surface of a substrate or a preceding layer in a reaction chamber from the vapor phase from an epitaxial gas flow comprising a carrier gas, at least one first precursor for an element from main group III, and at least one second precursor for an element from main group V, wherein when a first growth height is reached, a first initial doping level of the first conductivity type is set by means of a ratio of a first mass flow of the first precursor to a second mass flow of the second precursor, then the first initial doping level is reduced to a second initial doping level of the first or low second conductivity type.

In a cleaning process for removing parasitic depositions on surfaces of a process chamber of a CVD reactor, a susceptor of the CVD reactor is heated by a heating device, and the susceptor is regulated to a specified temperature or is heated with a constant heat output. Concurrently, an etching gas is supplied to the heated process chamber. The thermal response of at least one object is monitored, in which the thermal response is the temperature of the wide face of a process chamber cover, the wide face facing away from the process chamber. The parasitic depositions influence the emissivity of the surface of the process chamber cover, the emissivity influencing the temperature distribution in the process chamber. The supply of etching gas is terminated when the temperature reaches a comparison value, the temperature changing in response to changes in the surface emissivity during the cleaning process.

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to a dopant precursor to form doped AlN. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to a dopant precursor together constitute a doped AlN deposition cycle. A plurality of doped AlN deposition cycles may be performed to deposit a doped AlN film of a desired thickness. The dopant content of the doped AlN can be tuned by performing a particular ratio of 1) separated exposures to an aluminum precursor and a nitrogen precursor, to 2) subsequent exposures to the dopant. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.

Provided is a semiconductor light-emitting element having improved light emission output. The semiconductor light-emitting element includes a light-emitting layer having a layered structure in which a first III-V compound semiconductor layer and a second III-V compound semiconductor layer having different composition ratios are repeatedly stacked. The first and second III-V compound semiconductor layers each contain three or more types of elements that are selected from Al, Ga, and In and from As, Sb, and P. The composition wavelength difference between the composition wavelength of the first III-V compound semiconductor layer and the composition wavelength of the second III-V compound semiconductor layer is 50 nm or less. The ratio of the lattice constant difference between the lattice constant of the first III-V compound semiconductor layer and the lattice constant of the second III-V compound semiconductor layer is not less than 0.05% and not more than 0.60%.

Information about a process for depositing at least one layer on a substrate in a process chamber is obtained via a method including the step of storing actuation data and sensor values as raw data in a log file, together with their time reference. Knowledge about the quality of the deposited layer is obtained by using the raw data. For this purpose, process parameters are obtained from the raw data by means of a computing apparatus. The beginning and the end of the process steps for processing the substrate and their respective types are identified by analyzing the time curve of the process parameters. For at least some of the process steps, characteristic process step quantities corresponding to the particular type of the process steps are calculated from the measured values, and the obtained process step quantities are compared with comparison quantities associated with one or more similar process steps.

Embodiments of the invention provide a method of forming a group III-V material utilized in thin film transistor devices. In one embodiment, a gallium arsenide based (GaAs) layer with or without dopants formed from a solution based precursor may be utilized in thin film transistor devices. The gallium arsenide based (GaAs) layer formed from the solution based precursor may be incorporated in thin film transistor devices to improve device performance and device speed. In one embodiment, a thin film transistor structure includes a gate insulator layer disposed on a substrate, a GaAs based layer disposed over the gate insulator layer, and a source-drain metal electrode layer disposed adjacent to the GaAs based layer.

The invention provides the use of at least one binary group 15 element compound of the general formula R.sup.1R.sup.2E-E′R.sup.3R.sup.4 (I) or R.sup.5E(E′R.sup.6R.sup.7)2 (II) as the educt in a vapor deposition process. In this case, R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl group, and E and E′ are independently selected from the group consisting of N, P, As, Sb and Bi. This use excludes hydrazine and its derivatives. The binary group 15 element compounds according to the invention allow the realization of a reproducible production and/or deposition of multinary, homogeneous and ultrapure 13/15 semiconductors of a defined combination at relatively low process temperatures. This makes it possible to completely waive the use of an organically substituted nitrogen compound such as 1.1 dimethyl hydrazine as the nitrogen source, which drastically reduces nitrogen contaminations—compared to the 13/15 semiconductors and/or 13/15 semiconductor layers produced with the known production methods.

A cutting tool comprises a substrate and a coating layer provided on the substrate, the coating layer including a multilayer structure layer composed of a first unit layer and a second unit layer, and a lone layer, the lone layer including cubic Ti.sub.zAl.sub.1-zN crystal grains, an atomic ratio z of Ti in the Ti.sub.zAl.sub.1-zN being 0.4 or more and less than 0.55, the lone layer having a thickness with an average value of 2.5 nm or more and 10 nm or less, the multilayer structure layer having a thickness with an average value of 40 nm or more and 95 nm or less, one multilayer structure layer and one lone layer forming a repetitive unit having a thickness with an average value of 50 nm to 100 nm, a maximum value of 90 nm to 110 nm, and a minimum value of 40 nm to 60 nm.