The present disclosure relates to the use of a M (II) primary precursor of formula (I):

M(OCR.sup.1R.sup.2R.sup.3) L   (I)

wherein: M is Sn or Ge or Pb; L is a ligand displaying ALD reactivity for a secondary precursor; R.sup.1, R.sup.2, and R.sup.3 are each independently selected from: H or a linear or branched alkyl groups, and wherein at least one of R.sup.1, R.sup.2 and R.sup.3 is a linear or branched alkyl group, or an adduct of a metal (M) (II) precursor of formula (I), in the atomic layer deposition (ALD) of a M (II), M (0), or a M (IV) containing film layer on a substrate.

The present disclosure provides a powder-atomic-layer-deposition device with knocker, which mainly includes a vacuum chamber, a shaft seal, a drive unit and a knocker. The drive unit is connected to the rear wall of the vacuum chamber via the shaft seal, for driving the vacuum chamber to rotate. The shaft seal includes an outer tube and an inner tube, wherein the inner tube is disposed within the containing space of the outer tube. The inner tube is disposed with a gas-extracting pipeline and a gas-inlet pipeline therein, wherein the gas-extracting pipeline is for gas extraction of the vacuum chamber, the gas-inlet pipeline is for transferring a precursor gas into the vacuum chamber. The knocker and the vacuum chamber are adjacent to each other, for knocking the vacuum chamber to prevent powders within the reacting space from sticking to the inner surface of the vacuum chamber.

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR.sup.1R.sup.2R.sup.3).sub.2 are preferably used, wherein R.sup.1, R.sup.2, and R.sup.3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

A method for manufacturing an inorganic thin film electroluminescent display element comprises forming a layer structure, said forming the layer structure comprising forming a first dielectric layer (11); forming a luminescent layer (12), comprising manganese doped zinc sulfide ZnS:Mn, on the first dielectric layer, and forming a second dielectric layer (13) on the luminescent layer. Each of the first and the second dielectric layers are formed so as to comprise nanolaminate with alternating aluminum oxide Al.sub.2O.sub.3 and zirconium oxide ZrO.sub.2 sub-layers.

Provided is a radio wave transmittable laminate, which includes a substrate; a primer coating layer located on an upper surface of the substrate and including a polymer resin; a metal layer located on an upper surface of the primer coating layer and made of a metal; a plurality of micro cracks formed in the metal layer so as to transmit radio waves; and a hole pattern constituted by a plurality of holes which vertically penetrate the metal layer so as to transmit the radio waves.

In described examples, a device includes a semiconductor substrate; a buried layer; and a trench with inner walls extending from the buried layer to a surface of the semiconductor substrate, the trench having sidewalls, a bottom wall, a barrier layer including a titanium (Ti) layer covering the sidewalls and the bottom wall, and a filler including more than one layer of conductor material formed on the barrier layer.