Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.

Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium-containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.

A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.

An object of the invention is to provide a coated cutting tool whose tool life can be extended by having excellent wear resistance and fracture resistance. The coated cutting tool includes: a substrate; and a coating layer formed on a surface of the substrate, in which the coating layer includes a lower layer, an intermediate layer, and an upper layer in this order from a substrate side to a surface side of the coating layer, the lower layer includes one or more Ti compound layers formed of a specific Ti compound, the intermediate layer contains TiCNO, TiCO, or TiAlCNO, the upper layer contains α-type Al.sub.2O.sub.3, an average thickness of the lower layer is 2.0 μm or more and 8.0 μm or less, an average thickness of the intermediate layer is 0.5 μm or more and 2.0 μm or less and is 10% or more and 20% or less of an average thickness of the entire coating layer, an average thickness of the upper layer is 0.8 μm or more and 6.0 μm or less, and in the intermediate layer, a ratio of a length of CSL grain boundaries and a ratio of a length of Σ3 grain boundaries are in specific ranges.

PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.