A synthetic methodology for robust, nanostructured films of cobalt oxide over metal evaporated gold or similar material layer of, e.g., 50 nm, directly onto glass or other substrates via aerosol assisted chemical vapor deposition (AACVD). This approach allows film growth rates in the range of, e.g., 0.8 nm/s, using a commercially available precursor, which is ˜10-fold the rate of electrochemical synthetic routes. Thus, 250 nm thick cobalt oxide films may be generated in only 5 minutes of deposition time. The water oxidation reaction for such films may start at ˜0.6 V vs Ag/AgCl with current density of 10 mA/cm.sup.2 and is achieved at ˜0.75 V corresponding to an overpotential of 484 mV. This current density is further increased to 60 mA/cm.sup.2 at ˜1.5 V (vs Ag/AgCl). Electrochemically active surface area (ECSA) calculations indicate that the synergy between a Au-film, acting as electron sink, and the cobalt oxide film(s), acting as catalytic layer(s), are more pronounced than the surface area effects.

The invention is related to a soft-magnetic powder comprising coated particles, the coated particles comprising a core and a shell, the core having an average particle size D.sub.50 in a range from 0.1 μm to 100 μm and comprising iron, wherein the shell has a thickness of not more than 20 nm and comprises at least two solid oxides and wherein the shell comprises at least three layers and the shell comprises more than one layers of a first solid oxide and at least one layer of a second solid oxide, wherein the more than one layers of the first solid oxide and the at least one layer of the second solid oxide are arranged in an alternating manner. The invention is further related to a process for the production of the soft-magnetic powder, a use of the soft-magnetic powder and an electronic component comprising the soft-magnetic powder.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

Subject matter disclosed herein may relate to construction of a correlated electron material (CEM) device. In particular embodiments, after formation of a film comprising layers of a transition metal oxide (TMO) material and a dopant, at least a portion of the film may be exposed to an elevated temperature. Exposure of the at least a portion of the film to the elevated temperature may continue until the atomic concentration of the dopant within the film is reduced, which may enable operation of the film as a correlated electron material CEM exhibiting switching of impedance states.

Cobalt-containing compounds, their synthesis, and their use for the deposition of cobalt containing films are disclosed. The disclosed cobalt-containing compounds have one of the following formulae: wherein each of R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 is independently selected from Hydrogen; halogen; linear, cyclic or branched hydrocarbons; primary amino ligands (—NHR); or secondary amino ligands (—NRR′), with R and R′ independently being H or a linear, cyclic or branched hydrocarbon, provided at least one of R.sup.1, R.sup.2, or R.sup.3 in Formula I and R.sup.4 or R.sup.5 in Formula II is an amino ligand. ##STR00001##

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

Provided is a super water-repellent layer structure. The super water-repellent layer structure comprises a substrate having a ratchet structure formed on the upper surface thereof and a super water-repellent nanowire structure formed on the ratchet structure, wherein water drops can move in one direction without an external force. A super water-repellent layer structure can be provided which enables water drops to move in one direction using the ratchet structure and the super water-repellent nanowire structure even without force applied from the outside in a state in which the surface thereof is hardly inclined. Thus, such a super water-repellent layer structure can be applied to various industries such as water harvesting, drainage of condensation water of a heat exchanger, etc., a microfluidic industry.

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, precursors, in a gaseous form, may be utilized in a chamber to build a film of correlated electron materials comprising various impedance characteristics.

A method for forming a metal-organic framework comprising a step of providing a substrate; a single step of forming a single layer of metal oxide formed on the substrate said layer of metal oxide being transformed in whole or in part into metal-organic framework by successive implementation of a plurality of reaction cycles; each reaction cycle of the plurality of reaction cycles comprising: a treatment step with at least one ligand; a treatment step with at least one additive; the reaction cycles being implemented at least twice so as to form the metal-organic framework on the substrate.