Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.

Methods for making nanolaminates using Vapor Deposited methods such as Chemical Vapor Deposition and Physical Vapor Deposition, which can be applied on various surfaces, including glass, the soft polymeric material, or surgical instruments, as well as synthetic, composite, and organic materials. Methods of manufacturing nanolaminates by employing sequential surface reactions, wherein the antimicrobial coatings are provided by employing an Atomic Layer Deposition (ALD) process, thermal spray and or aerosol assisted deposition.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

An ALD device includes a first precursor generator that is connected to a processing gas source and generates a first precursor to be supplied to a reactor vessel, and a second precursor generator that is connected to a reducing gas source and the reactor vessel and generates a second precursor to be supplied to the reactor vessel. The first precursor generator etches a target by a first plasma excited by a first plasma generator and supplies a compound gas containing a metallic component as the first precursor. The second precursor generator supplies radicals of a reducing gas component in a second plasma excited by a second plasma generator as the second precursor.

A method for forming a metal-organic framework comprising a step of providing a substrate; a single step of forming a single layer of metal oxide formed on the substrate said layer of metal oxide being transformed in whole or in part into metal-organic framework by successive implementation of a plurality of reaction cycles; each reaction cycle of the plurality of reaction cycles comprising: a treatment step with at least one ligand; a treatment step with at least one additive; the reaction cycles being implemented at least twice so as to form the metal-organic framework on the substrate.

There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical composition REBa.sub.2Cu.sub.3O.sub.7−x, where RE is one or more rare earth elements, for example: Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. The superconductor layer is produced using Photo-Assisted Metal Organic Chemical Vapor Deposition (PAMOCVD) and contains non-superconducting nanoparticles. The nanoparticles are substantially provided in the a-b plane and naturally oriented. The non-superconducting nanoparticles provide flux pinning centers that improve the critical current properties of the superconducting film.

An anti-coking surface having a thickness up to 15 microns comprising from 15 to 50 wt. % of MnCr.sub.2O.sub.4 (for example manganochromite); from 15 to 25 wt. % of Cr.sub.0.23Mn.sub.0.08Ni.sub.0.69 (for example chromium manganese nickel); from 10 to 30 wt. % of Cr.sub.1.3Fe.sub.0.7O.sub.3 (for example chromium iron oxide); from 12 to 20 wt. % of Cr.sub.2O.sub.3 (for example eskolaite); from 4 to 20 wt. % of CuFe.sub.5O.sub.8 (for example copper iron oxide); and less than 5 wt. % of one or more compounds chosen from FeO(OH), CrO(OH), CrMn, Si and SiO.sub.2 (either as silicon oxide or quartz) and less than 0.5 wt. % of aluminum in any form provided that the sum of the components is 100 wt. % is provided on steel.

An anti-coking surface having a thickness up to 15 microns comprising from 15 to 50 wt. % of MnCr.sub.2O.sub.4 (for example manganochromite); from 15 to 25 wt. % of Cr.sub.0.23Mn.sub.0.08Ni.sub.0.69 (for example chromium manganese nickel); from 10 to 30 wt. % of Cr.sub.1.3Fe.sub.0.7O.sub.3 (for example chromium iron oxide); from 12 to 20 wt. % of Cr.sub.2O.sub.3 (for example eskolaite); from 4 to 20 wt. % of CuFe.sub.5O.sub.8 (for example copper iron oxide); and less than 5 wt. % of one or more compounds chosen from FeO(OH), CrO(OH), CrMn, Si and SiO.sub.2 (either as silicon oxide or quartz) and less than 0.5 wt. % of aluminum in any form provided that the sum of the components is 100 wt. % is provided on steel.

A method is provided, including the following operations: depositing a liner in a feature of a substrate; depositing a monolayer of zinc over the liner; after depositing the monolayer of zinc, performing a thermal treatment on the substrate, wherein the thermal treatment is configured to cause migration of the zinc to an interface of the liner and an oxide layer of the substrate, the migration of the zinc producing an adhesive barrier at the interface that improves adhesion between the liner and the oxide layer of the substrate; repeating the operations of depositing the monolayer of zinc and performing the thermal treatment until a predefined number of cycles is reached.

A method and system for depositing an atomic layer on a substrate. The method performs one or more method cycles to form a p-type oxide layer, wherein a method cycle includes performing successively the steps of: exposing the substrate to a Sn(IV) or Cu(II) precursor gas, exposing the substrate to an oxygen donor gas, wherein prior to and/or after exposing the substrate to the oxygen donor gas, hydrogen radicals are exposed to the substrate.