A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.

A film forming apparatus includes a stage on which a substrate is mounted, a first container configured to accommodate the stage, a gas supply configured to supply gases containing two types of monomers into the first container to form a polymer film on the substrate mounted on the stage, a porous member arranged radially outward from a processing space, which is a space above the substrate, and configured to draw in polymers formed by the gases containing two types of monomers exhausted from the first container, and a heater configured to heat the porous member to a first temperature when the polymer film is formed on the substrate.

The present application discloses a vapor deposition apparatus, including: a reaction chamber, a gas spraying device, and a cleaning gas channel, wherein the gas spraying device includes a reaction gas channel, and the reaction gas channel includes an outlet communicating with the reaction chamber; and the cleaning gas channel is spaced apart from the reaction gas channel, such that the probability of generating the residual produce in the reaction chamber can be reduced, and the uniformity of film formation and the utilization rate of the machine are improved.

A reactor system comprises a process chamber, a gas inlet, and a dispenser. The dispenser is coupled to the gas inlet. The dispenser controls a gas flow from a vial to the gas inlet. The vial includes a coating material that, when released inside the process chamber under operating conditions of the reaction system, coats an inner wall of the process chamber.

The present inventive concept relates to a substrate processing device and a substrate processing method. The substrate processing device comprises: a chamber; a substrate support part rotatably installed in a process space inside the chamber so as to allow at least one substrate to be seated thereon; a first gas spray unit for spraying, to a first region of the process space, a source gas and a first purge gas for purging the source gas; a source gas supply source for supplying the source gas to the first gas spray unit; a first purge gas supply source for supplying the first purge gas to the first gas spray unit; a second gas spray unit spatially separated from the first region and configured to spray, to a second region of the process space, a reactant gas reacting with the source gas and a second purge gas for purging the reactant gas; a reactant gas supply source for supplying the reactant gas to the second gas spray unit; and a second purge gas supply source for supplying the second purge gas to the second gas spray unit.

There is provided a shower head disposed in a processing container where a substrate is accommodated and configured to discharge a gas to the substrate in a shower pattern, comprising: a main body portion having a facing surface facing a stage disposed in the processing container to place the substrate thereon; a covering section that covers a surface formed on an opposite side of the facing surface of the main body portion, and forms, between the surface and the covering section, an exhaust space that is exhausted by an exhaust mechanism; a plurality of exhaust hole forming regions disposed on the facing surface apart from each other and each having a plurality of exhaust holes; a plurality of discharge holes disposed for each of the exhaust hole forming regions on the facing surface to surround each of the plurality of exhaust hole forming regions and configured to discharge the gas; a diffusion space disposed to be shared by the plurality of discharge holes, where the gas supplied to the main body portion is diffused to be supplied to each of the plurality of discharge holes; and an exhaust path disposed in the main body portion to be connected to the exhaust holes and opened to the exhaust space in order to exhaust the gas discharged from the discharge holes into the exhaust space.

A plasma processing apparatus includes: a reaction tube provided in a processing container; a boat that holds a substrate, and is carried into and out from the reaction tube in order to form a film on the substrate; a plasma generation tube that communicates with the reaction tube, and generates plasma from a gas; a gas supply that supplies the gas to the plasma generation tube; electrode installation columns provided to sandwich the plasma generation tube therebetween, and including electrodes, respectively; an RF power supply that is connected to the electrodes, and supplies a radio frequency to the electrodes; a coil provided to be spaced apart from the electrodes in the electrode installation columns; and a DC power supply that is connected to the coil, and supplies a direct current to the coil.

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

A gas processing apparatus includes: a mounting part; a gas supply part located above the mounting part and having a plurality of first gas supply holes; a gas supply path forming part configured to form a supply path of a processing gas, the gas supply path forming part including a flat opposing surface which faces the gas supply part from above and defines a first diffusion space for diffusing the processing gas in a lateral direction; a recess surrounding a central portion of the opposing surface; and a plurality of gas dispersion portions located in the recess surrounding the central portion of the opposing surface without protruding from the opposing surface, each of the plurality of gas dispersion portions having a plurality of gas discharge holes extending along a circumferential direction so as to laterally disperse the processing gas supplied from the supply path in the first diffusion space.