A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

A method of forming a germanium antimony tellurium (GeSbTe) layer includes forming a germanium antimony (GeSb) layer by repeatedly performing a GeSb supercycle; and forming the GeSbTe layer by performing a tellurization operation on the GeSb layer, wherein the GeSb supercycle includes performing at least one GeSb cycle; and performing at least one Sb cycle, the GeSbTe has a composition of Ge.sub.2Sb.sub.2+aTe.sub.5+b, in which a and b satisfy the following relations: −0.2<a<0.2 and −0.5<b<0.5.

Methods for forming a nucleation layer on a substrate. In some embodiments, the processing method comprises sequential exposure to a first reactive gas comprising a metal precursor and a second reactive gas comprising a halogenated silane to form a nucleation layer on the surface of the substrate.

Methods and systems for depositing a layer comprising silicon oxide on the substrate are disclosed. Exemplary methods include cyclical deposition methods that include providing a first silicon precursor to the reaction chamber, providing a second silicon precursor, and using a reactant or a non-reactant gas forming silicon oxide on a surface of the substrate. Exemplary methods can further include a treatment step.

Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.

Various embodiments herein relate to methods and apparatus for depositing silicon oxide using thermal ALD or thermal CVD. In one aspect of the disclosed embodiments, a method for depositing silicon oxide is provided, the method including: (a) receiving the substrate in a reaction chamber; (b) introducing a first flow of a first reactant into the reaction chamber and exposing the substrate to the first reactant, where the first reactant includes a silicon-containing reactant; (c) introducing a second flow of a second reactant into the reaction chamber to cause a reaction between the first reactant and the second reactant, (i) where the second reactant includes hydrogen (H2) and an oxygen-containing reactant, (ii) where the reaction deposits silicon oxide on the substrate, and (iii) where the reaction is initiated when a pressure in the reaction chamber is greater than 10 Torr and equal to or less than about 40 Torr.

Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising TiN comprises exposing a semiconductor substrate to one or more first cyclical vapor deposition cycles each comprising an exposure to a first Ti precursor and an exposure to a first N precursor to form a first portion of the thin film and exposing the semiconductor substrate to one or more second cyclical vapor deposition cycles each comprising an exposure to a second Ti precursor and an exposure to a second N precursor to form a second portion of the thin film, wherein exposures to one or both of the first Ti precursor and the first N precursor during the one or more first cyclical vapor deposition cycles are at different pressures relative to corresponding exposures to one or both of the second Ti precursor and the second N precursor during the one or more second cyclical vapor deposition cycles. Aspects are also directed to semiconductor structures incorporating the thin film and method of forming the same.

The present invention provides lithium nickelate-based positive electrode active substance particles having a high energy density which are excellent in charge/discharge cycle characteristics when highly charged, and hardly suffer from generation of gases upon storage under high-temperature conditions, and a process for producing the positive electrode active substance particles, as well as a non-aqueous electrolyte secondary battery. The present invention relates to positive electrode active substance particles each comprising a core particle X comprising a lithium nickelate composite oxide having a layer structure which is represented by the formula: Li.sub.1+aNi.sub.1−b−cCo.sub.bM.sub.cO.sub.2 wherein M is at least one element selected from the group consisting of Mn, Al, B, Mg, Ti, Sn, Zn and Zr; a is a number of −0.1 to 0.2 (−0.1•a•0.2); b is a number of 0.05 to 0.5 (0.05•b•0.5); and c is a number of 0.01 to 0.4 (0.01•c•0.4); a coating compound Y comprising at least one element selected from the group consisting of Al, Mg, Zr, Ti and Si; and a coating compound Z comprising an Li element, in which a content of lithium hydroxide LiOH in the positive electrode active substance particles is not more than 0.40% by weight, a content of lithium carbonate Li.sub.2CO.sub.3 in the positive electrode active substance particles is not more than 0.65% by weight, and a weight ratio of the content of lithium carbonate to the content of lithium hydroxide is not less than 1.

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.