Patent classifications
C23C16/45595
Plasma processing apparatus, plasma processing method, and method for manufacturing electronic device
Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.
Article with buffer layer and method of making the same
A method of forming a coating layer on a glass substrate in a glass manufacturing process includes: providing a first coating precursor material for a selected coating layer composition to at least one multislot coater to form a first coating region of the selected coating layer; and providing a second coating precursor material for the selected coating layer composition to the multislot coater to form a second coating region of the selected coating layer over the first region. The first coating precursor material is different than the second precursor coating material.
ULTRA-THIN FILMS WITH TRANSITION METAL DICHALCOGENIDES
Methods for selectively forming a transition metal dichalcogenide (TMDC) film comprise exposing a substrate comprising a silicon oxide-based surface and a tungsten (W) segment to a sulfur source to selectively form the transition metal dichalcogenide film with the tungsten segment relative to the silicon oxide-based surface. Chemical vapor deposition (CVD) at a temperature in a range of 350° C. to 600° C. is used to form the TMDC film. CVD may be conducted by low pressure CVD (LPCVD) or atmospheric pressure CVD (APCVD). Methods of making devices incorporating the TMDC films are also provided.
APPARATUS AND PROCESS FOR DETERMINING THE DISTANCE BETWEEN A GLASS SUBSTRATE AND A COATER
A combination of a chemical vapour deposition (CVD) coater and at least one capacitive proximity sensor, comprising: a CVD coater, and at least one capacitive proximity sensor attached to the CVD coater, wherein the at least one capacitive proximity sensor is arranged to determine the distance between a glass substrate and the CVD coater.
FILM FORMING DEVICE
Provided is a film forming device that deposits, on a substrate, a product generated by decomposing raw material gas by a plasma discharged from a discharge port of a double tube, the device including: an inner tube through which raw material gas containing a film-forming raw material flows and is guided to the discharge port on a downstream side; an outer tube that has the inner tube inserted thereinto and through which plasma-generating gas flows and a plasma generated by discharge is guided to the discharge port on the downstream side; a first electrode that is formed in an annular shape around the outer tube and grounded; and a second electrode that is formed in an annular shape around the outer tube and to which a voltage is applied. The second electrode is disposed on the downstream side with respect to the first electrode, and assuming that a length of the second electrode in an axial direction is L1 and a diameter of the outer tube is D1, a relationship of L1≥D1 is satisfied.
Film forming apparatus
Inside a heating space of a heating chamber, a first heating treatment of moving a substrate along a substrate moving direction is performed by a first conveyor. After that, first conveyance processing of moving the substrate along a conveying direction is performed by a second conveyor. At this time, source mist is sprayed on the substrate by first thin film forming nozzles. Subsequently, second heating treatment is performed by a third conveyor. After that, second conveyance processing is performed by a fourth conveyor. At this time, source mist is sprayed on the substrate by second thin film forming nozzles.
Method and apparatus for atmospheric pressure plasma jet coating deposition on a substrate
A method for plasma coating an object includes an object profile, having the steps of: a) manufacturing a replaceable shield comprising a jet inlet, a nozzle outlet and a sidewall extending from the jet inlet to the nozzle outlet, wherein the nozzle outlet includes an edge essentially congruent to at least part of the object profile; b) detachably attaching the replaceable shield to a jet outlet of a plasma jet generator; c) placing the object at the nozzle outlet such that the object profile fits closely to the nozzle outlet edge; d) plasma coating the object with a low-temperature, oxygen-free plasma at an operating pressure which is higher than the atmospheric pressure by providing a plasma jet in the shield via the plasma jet generator and injecting coating precursors in the plasma jet in the shield.
Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus
A substrate processing apparatus includes a reaction chamber including an inlet through which a reaction gas is supplied and an outlet through which residue gas is exhausted; a plurality of ionizers located at a front end of the inlet and configured to ionize the reaction gas supplied through the inlet; and a heater configured to heat the reaction chamber. The plurality of ionizers include a first ionizer configured to ionize the reaction gas positively; and a second ionizer configured to ionize the reaction gas negatively.
CARBON DOPED METAL OXYFLUORIDE (C:M-0-F) LAYER AS PROTECTION LAYER IN FLUORINE PLASMA ETCH PROCESSES
An article including: a substrate; and a protective film overlaying at least part of the substrate, the film including a fluorinated metal oxide, containing one or more elements of the Group III and/or Group IV elements of the periodical system of elements, characterized in that the protective film includes the fluorinated metal oxide with a carbon doping with a carbon concentration not lower than 0.1 at % and not higher than 10 at %, preferably not lower than 0.5 at % and more preferably not higher than 2.5 at %, wherein the article is a plasma etch chamber component and/or part and preferably an article of the group formed by electrostatic chuck, a ring, a process kit ring, a single ring, a chamber wall, a shower head, a nozzle, a lid, a liner, a window, a baffle or a fastener.
Coating apparatus with half open loop
The present invention relates to a coating apparatus also called coating tunnel or coating hood for applying a protective coating to hollow glass containers. In particular it relates to a coating apparatus also called coating tunnel or coating hood with the re-use of the coating material containing exhaust from the end of the coating tunnel for applying the protective coatings to glass containers. More particularly the present invention relates to a coating apparatus also called coating tunnel or coating hood with an additional half-loop that re-uses the coating material containing exhaust from the end of the coating tunnel at the entrance of the tunnel while replacing fresh air.