Patent classifications
C23C18/08
METHOD FOR FORMING BINDER-FREE REFRACTORY CARBIDE, NITRIDE AND BORIDE COATINGS WITH A CONTROLLED POROSITY
The present invention is directed to methods for formation of refractory carbide, nitride, and boride coatings without use of a binding agent. The present invention is directed to methods of creating refractory coatings with controlled porosity. Refractory coatings can be formed from refractory metal, metal oxide, or metal/metal oxide composite refractory coating precursor of the 9 refractory metals encompassed by groups 4-6 and periods 4-6 of the periodic table; non-metallic elements (e.g. Si & B) and their oxides (i.e. SiO.sub.2 & B.sub.2O.sub.3) are also pertinent. The conversion of the refractory coating precursor to refractory carbide, nitride or boride is achieved via carburization, nitridization, or boridization in the presence of carbon-containing (e.g. CH.sub.4), nitrogen containing (e.g. NH.sub.3), and boron-containing (e.g. B.sub.2H.sub.6) gaseous species. Any known technique of applying the refractory coating precursor can be used. The porosity of resultant refractory coatings is controlled through compositional manipulation of composite refractory coating precursors.
METHOD FOR FORMING BINDER-FREE REFRACTORY CARBIDE, NITRIDE AND BORIDE COATINGS WITH A CONTROLLED POROSITY
The present invention is directed to methods for formation of refractory carbide, nitride, and boride coatings without use of a binding agent. The present invention is directed to methods of creating refractory coatings with controlled porosity. Refractory coatings can be formed from refractory metal, metal oxide, or metal/metal oxide composite refractory coating precursor of the 9 refractory metals encompassed by groups 4-6 and periods 4-6 of the periodic table; non-metallic elements (e.g. Si & B) and their oxides (i.e. SiO.sub.2 & B.sub.2O.sub.3) are also pertinent. The conversion of the refractory coating precursor to refractory carbide, nitride or boride is achieved via carburization, nitridization, or boridization in the presence of carbon-containing (e.g. CH.sub.4), nitrogen containing (e.g. NH.sub.3), and boron-containing (e.g. B.sub.2H.sub.6) gaseous species. Any known technique of applying the refractory coating precursor can be used. The porosity of resultant refractory coatings is controlled through compositional manipulation of composite refractory coating precursors.
NOVEL PLATINUM COMPLEXES
Platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 are the same or different monoolefin ligands or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 are the same or different C6-C18 or C8-C18 non-aromatic monocarboxylic acid groups with the exception of a phenylacetic acid group, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1R2(CO)O—, wherein it is a mononuclear platinum complex where n=1, or wherein, in the event of the presence of L1L2 and/or of —O(CO)R1R2(CO)O—, it may be a polynuclear platinum complex with a whole number n>1.
NOVEL PLATINUM COMPLEXES
Platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 are the same or different monoolefin ligands or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 are the same or different C6-C18 or C8-C18 non-aromatic monocarboxylic acid groups with the exception of a phenylacetic acid group, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1R2(CO)O—, wherein it is a mononuclear platinum complex where n=1, or wherein, in the event of the presence of L1L2 and/or of —O(CO)R1R2(CO)O—, it may be a polynuclear platinum complex with a whole number n>1.
CONDUCTIVE INK COMPOSITIONS
A conductive structure is provided. The conductive ink composition includes a silver complex formed by mixing a silver carboxylate, at least one dissolving agent that dissolves the silver carboxylate, and a catalyst. The catalyst includes an amine that decarboxylates the silver carboxylate to make the conductive ink composition. The catalyst decarboxylates the silver carboxylate at a temperature of 100° C. or less. An ink composition comprising a metallic salt with a sterically bulky counter ion and a ligand is also provided. An ink composition for making a conductive structure, comprising a reducible metal complex formed by mixing: a reducing agent, wherein the reducing agent is dissolved in a dissolving agent; and at least one metal salt or metal complex comprising a Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal, wherein the reducing agent reduces the metal to forms the conductive structure is further provided.
CONDUCTIVE INK COMPOSITIONS
A conductive structure is provided. The conductive ink composition includes a silver complex formed by mixing a silver carboxylate, at least one dissolving agent that dissolves the silver carboxylate, and a catalyst. The catalyst includes an amine that decarboxylates the silver carboxylate to make the conductive ink composition. The catalyst decarboxylates the silver carboxylate at a temperature of 100° C. or less. An ink composition comprising a metallic salt with a sterically bulky counter ion and a ligand is also provided. An ink composition for making a conductive structure, comprising a reducible metal complex formed by mixing: a reducing agent, wherein the reducing agent is dissolved in a dissolving agent; and at least one metal salt or metal complex comprising a Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal, wherein the reducing agent reduces the metal to forms the conductive structure is further provided.
Preparations of platinum complexes
Preparation containing: (A) 30 to 90% by weight of at least one organic solvent; (B) 10 to 70% by weight of at least one platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 represent the same or different monoolefin ligands, or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent the same or different C6-C18 non-aromatic monocarboxylic acid groups, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1 R2(CO)O—, wherein they are mononuclear platinum complexes with n=1, or wherein, if L1L2 and/or —O(CO)R1 R2(CO)O— are present, they may be polynuclear platinum complexes with a whole number n>1, and (C) 0 to 10% by weight of at least one additive.
Preparations of platinum complexes
Preparation containing: (A) 30 to 90% by weight of at least one organic solvent; (B) 10 to 70% by weight of at least one platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 represent the same or different monoolefin ligands, or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent the same or different C6-C18 non-aromatic monocarboxylic acid groups, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1 R2(CO)O—, wherein they are mononuclear platinum complexes with n=1, or wherein, if L1L2 and/or —O(CO)R1 R2(CO)O— are present, they may be polynuclear platinum complexes with a whole number n>1, and (C) 0 to 10% by weight of at least one additive.
Composition for forming a patterned metal film on a substrate
A composition for forming a patterned thin metal film on a substrate is presented. The composition includes metal cations; and at least one solvent, wherein the patterned thin metal film is adhered to a surface of the substrate upon exposure of the at least metal cations to a low-energy plasma.
Composition for forming a patterned metal film on a substrate
A composition for forming a patterned thin metal film on a substrate is presented. The composition includes metal cations; and at least one solvent, wherein the patterned thin metal film is adhered to a surface of the substrate upon exposure of the at least metal cations to a low-energy plasma.