The present invention relates to a method for producing a layered body comprising at least two layers containing a noble metal in metallic form, which differ from one another in electrical conductivity, porosity, density and/or specific surface unit. The present invention also relates to a layered body obtainable by this method, an electronic component, preferably an electrode, comprising a conductive layer containing a layered body according to the invention, the use of a compound comprising a complex selected from the group consisting of the complexes (COD)Pt[O(CO)CH(C.sub.2H.sub.5)C.sub.4H.sub.9].sub.2, (COD)Pt[O(CO)C(CH.sub.3).sub.2C.sub.6H.sub.13].sub.2 and a mixture thereof, for producing a layer containing platinum in metallic form with a defined density, the use of a compound comprising a complex selected from the group consisting of the complexes (COD)Pt[O(CO)CH(C.sub.2H.sub.5)C.sub.4H.sub.9].sub.2, (COD)Pt[O(CO)C(CH.sub.3).sub.2C.sub.6H.sub.13].sub.2 and a mixture thereof for producing a layer containing platinum in metallic form having a defined specific surface.

The invention relates to a process for the production of lithium metal and lithium alloy mouldings, wherein solutions of metallic lithium in ammonia having the composition Li(NH.sub.3).sub.4+n and n=0-10 are brought into contact with metallic or electronically conductive deposition substrates and the ammonia is removed at temperatures of −100 to 100° C. by overflowing with inert gas or at pressures of 0.001 to 700 mbar, so that the remaining lithium is deposited on the deposition substrate or/and it is doped with lithium or alloyed by it.

The invention relates to a process for the production of lithium metal and lithium alloy mouldings, wherein solutions of metallic lithium in ammonia having the composition Li(NH.sub.3).sub.4+n and n=0-10 are brought into contact with metallic or electronically conductive deposition substrates and the ammonia is removed at temperatures of −100 to 100° C. by overflowing with inert gas or at pressures of 0.001 to 700 mbar, so that the remaining lithium is deposited on the deposition substrate or/and it is doped with lithium or alloyed by it.

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

A bonding structure formed on a substrate includes an indium layer and a passivating nickel plating formed on the indium layer. The nickel plating serves to prevent a reaction involving the indium layer.

Provided are: a structure with a conductive pattern that can be obtained in a simple manufacturing process and that exhibits favorable interlayer adhesion; and a method for manufacturing same. An embodiment of the present invention provides a structure with a conductive pattern, the structure comprising a base material, and a copper-containing conductive layer arranged on the surface of the base material, wherein when a principal surface of the conductive layer on the side facing the base material is a first principal surface, and a principal surface of the conductive layer on the opposite side from the first principal surface is a second principal surface, the conductive layer: has a porosity of 0.01 to 50 volume percent in a first principal surface-side region that extends from the first principal surface to a depth of 100 nm in the thickness direction of the conductive layer.

Preparation containing: (A) 30 to 90% by weight of at least one organic solvent; (B) 10 to 70% by weight of at least one platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 represent the same or different monoolefin ligands, or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent the same or different C6-C18 non-aromatic monocarboxylic acid groups, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1 R2(CO)O—, wherein they are mononuclear platinum complexes with n=1, or wherein, if L1L2 and/or —O(CO)R1 R2(CO)O— are present, they may be polynuclear platinum complexes with a whole number n>1, and (C) 0 to 10% by weight of at least one additive.

Preparation containing: (A) 30 to 90% by weight of at least one organic solvent; (B) 10 to 70% by weight of at least one platinum complex of the type [L1L2Pt[O(CO)R1]X].sub.n, wherein L1 and L2 represent the same or different monoolefin ligands, or together represent a compound L1L2 acting as a diolefin ligand, wherein X is selected from bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent the same or different C6-C18 non-aromatic monocarboxylic acid groups, or together represent a C8-C18 non-aromatic dicarboxylic acid group —O(CO)R1 R2(CO)O—, wherein they are mononuclear platinum complexes with n=1, or wherein, if L1L2 and/or —O(CO)R1 R2(CO)O— are present, they may be polynuclear platinum complexes with a whole number n>1, and (C) 0 to 10% by weight of at least one additive.