Patent classifications
C23C18/1233
MICROWAVE-ASSISTED APPARATUS, SYSTEM AND METHOD FOR DEPOSITION OF FILMS ON SUBSTRATES
The present invention provides an apparatus for the deposition of thin films on a substrate, including large substrates, held preferably face-down, in a cartridge containing a liquid solution with at least a chemical precursor which, upon being subject to a uniform microwave field transmitted through a microwave-transparent window, leads to the formation of a thin film on the substrate. The present invention also provides a system for launching microwaves and controlling the process for film deposition on the substrate. The present invention also provides a process for obtaining a film of uniform thickness and characteristics on a substrate or for incorporating controlled non-uniformity. The present invention also provides an apparatus and method for film deposition on a series of substrates in a continuous batch process.
FLEXIBLE LIGHT-EMITTING DEVICE, AND METHOD AND DEVICE FOR MANUFACTURING SAME
A flexible emitting light device production apparatus of the present disclosure includes: a stage (520) for supporting a flexible emitting light supporting substrate (10), the flexible display supporting substrate including a glass base (11) and a synthetic resin film (12) provided on the glass base; a polisher head (535) configured to approach a selected region of a surface (12s) of the synthetic resin film (12) and polish the region so that a polish recess (12e) is formed in the surface (12s); and a repair head (536) for supplying a liquid material (20a) to the polish recess (12c) formed in the surface (12s) of the synthetic resin film (12) and heating the liquid material (20a), thereby forming a sintered layer (20) from the liquid material (20a).
DEVICE CONTAINING METAL OXIDE-CONTAINING LAYERS
The present invention is directed to process for preparing a device comprising a first layer and a first electrode, the method comprising forming the first layer over a first electrode by applying a liquid anhydrous composition comprising at least one metal oxo alkoxide and at least one solvent, onto a surface, the surface being selected from the surface of the first electrode or the surface of a layer being located over the first electrode, optionally drying the composition, and converting the composition to a metal oxide-containing first layer, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the first electrode before or after the formation of the first layer and to the device itself.
METHOD FOR PRODUCING A COATING LAYER COATED ONTO THE INNER SURFACE OF A CONTAINER AND A CONTAINER OBTAINED WITH SUCH A METHOD
A method for producing a layer for coating the inner surface of a container and a glass or plastic container obtained by said method, wherein said container is suitable for containing products biocompatible with humans and/or animals. The method includes: forming a solution containing a solvent, water, a molecular precursor comprising alkoxy groups and an acid as a catalyst, mixing said solution to initiate hydrolysis and condensation, applying the resulting solution onto at least one portion of the inner surface of the container, while the solution is in the process of gelling, the resulting applied solution is then dried at a temperature for a predetermined time, before curing. The acid is citric acid, wherein said citric acid is at a concentration of less than 6 mol/l, and in that the solution comprises less than 1.5 units of precursor for each volume unit of acid.
BARRIER FILM
Provided is a barrier film, comprising: a base layer; and an inorganic layer including Si, N, and O, wherein the inorganic layer has a thickness of 600 nm or less, and the film has a water vapor transmission rate of 0.5×10.sup.−3 g/m.sup.2.Math.day as measured under conditions of a temperature of 38° C. and 100% relative humidity. The barrier film has excellent barrier properties and optical properties and can be used for electronic products sensitive to moisture.
BARRIER FILM
Provided is a barrier film comprising a base layer, and an inorganic layer including Si, N, and O, and including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, wherein the film has a water vapor transmission rate of 5.0×10.sup.−4 g/m.sup.2.Math.day or less as measured under conditions of a temperature of 38° C. and 100% relative humidity after being stored at 85° C. and 85% relative humidity conditions for 250 hours, or wherein the inorganic layer has a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s. The barrier film has excellent barrier properties and optical properties and can be used for electronic products that are sensitive to moisture and the like.
Patterning silica islands onto thermoplastic shrink film
The disclosure relates to methods and devices for measuring samples, such as biological samples, especially those at low abundance, with high sensitivity and at low cost. A sample is disposed on a shrinkable scaffold and the shrinkable scaffold is shrunk, reducing the area where the sample is distributed, so as to effectively concentrate the sample on the surface of the scaffold. In the event that a biological sample is covalently attached to a scaffold having a silica structure, the increase in signal enhancement is also due to optical effects stemming from covalent linkage of the biological sample onto the silica structure of the scaffold. Silica (SiO.sub.2) may be deposited onto a surface of a polymer film by functionalizing the surface of the polymer film to bind silica from a sol-gel solution, and coating the film with a sol-gel solution containing silica precursors, wherein solid silica from the sol-gel solution is deposited onto the surface of the polymer film. Also disclosed is an immunoassay platform comprising a silica-encapsulated first detection agent deposited on a polymer substrate.
BARRIER FILM
Provided is a barrier film, comprising a base layer and an inorganic layer including a first region and a second region, which have different elemental contents (atomic %) of Si, N, and O from each other as measured by XPS, and having a compactness expressed through an etching rate of 0.17 nm/s in the thickness direction for an Ar ion etching condition to etch Ta.sub.2O.sub.5 at a rate of 0.09 nm/s, wherein the second region has a higher elemental content of N than that of the first region, and the second region has a thickness of 10% or more relative to the total thickness of the inorganic layer. The barrier film has excellent barrier properties and optical properties and can be used for electronic products which are sensitive to moisture and the like.
Transition-metal chalcogenide thin film and preparing method of the same
A method of manufacturing transition metal chalcogenide thin films, includes the operations of forming a transition metal chalcogenides precursor on a substrate, and irradiating light onto the transition metal chalcogenides precursor. The transition metal chalcogenides precursor includes an amine-based ligand.
NANOWIRE-EQUIPPED FILM AND NANOWIRE MANUFACTURING METHOD
A nanowire-equipped film comprises a substrate made of a crystalline resin, and nanowires made of a metal oxide and grown directly on the substrate. A fine textured structure is formed on a surface of the substrate, and the nanowires are grown directly from the textured structure.