A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

A substrate processing apparatus 5 includes a holder 52 (52A), a supply 53 and a cover body 6. The holder 52 (52A) is configured to attract and hold a substrate W. The supply 53 is configured to supply a heated plating liquid to the substrate W attracted to and held by the holder 52 (52A). The cover body 6 is configured to cover the substrate W attracted to and held by the holder 52 (52A), and heat the plating liquid on the substrate W by using a heating device 63 provided in a ceiling member 61 thereof facing a top surface of the substrate W. The holder 52 (52A) includes protrusions 130 projecting from a facing surface 110 thereof facing a bottom surface of the substrate W toward the bottom surface of the substrate W, and each protrusion has a protruding height equal to or larger than 1 mm.

A substrate processing apparatus includes a rotation driving mechanism configured to rotate a rotary table configured to hold a substrate; an electric heater provided in the rotary table to be rotated along with the rotary table and configured to heat the substrate; a power receiving electrode provided in the rotary table to be rotated along with the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode and configured to supply a power to the electric heater via the power receiving electrode; an electrode moving mechanism; a power feeder configured to supply the power to the power feeding electrode; a processing cup surrounding the rotary table; at least one processing liquid nozzle configured to supply a processing liquid; a processing liquid supply mechanism configured to supply at least an electroless plating liquid; and a controller.

A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

Provided is a method of manufacturing a rotary machine, which includes: a casing forming process of forming a casing of the rotary machine that has multiple opening parts and suctions and discharges a fluid; a surface activating process of supplying a pretreatment liquid into the casing, then discharging the pretreatment liquid from the casing through the opening parts, and activating an inner surface of the casing after the casing forming process; a plating process of performing supply and discharge of a plating liquid into and from the easing through the opening parts to circulate the plating liquid and plating the inner surface of the casing after the surface activating process; and an assembling process of providing a rotating body that is rotatable relative to the casing so as to he covered from an outer circumference side by the casing plated in the plating process.

Disclosed herein are ink compositions for making a conductive copper structure. The ink composition comprise a copper metal precursor compound, a chelating agent, and a reducing agent. In some embodiments, the redox potential of the reducing agent is adjusted for controlled reduction of copper ion in the copper metal precursor to metal copper metal. Also disclosed herein are methods for making the ink compositions and methods for using the same.

A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

A controller performs an adjustment processing including: forming a film on a surface of a substrate by a film forming unit; removing a peripheral portion of the film by the film forming unit; acquiring surface information indicating a state of the surface of the substrate including the film, from which the peripheral portion has been removed, by a surface inspection unit and adjusting a cut width of the peripheral portion based on the surface information; and peeling the film, from which the peripheral portion has been removed, by the film forming unit, and a process processing including: forming the film on the surface of the substrate by the film forming unit; and removing the peripheral portion by the cut width adjusted in the adjustment processing in the film forming unit.

Disclosed herein are ink compositions for making a conductive copper structure. The ink composition comprise a copper metal precursor compound, a chelating agent, and a reducing agent. In some embodiments, the redox potential of the reducing agent is adjusted for controlled reduction of copper ion in the copper metal precursor to metal copper metal. Also disclosed herein are methods for making the ink compositions and methods for using the same.

A substrate processing method includes activating, accumulating, forming a plating film, performing a post-processing and drying. In the activating, a plating liquid L1 is activated by heating and maintaining the plating liquid at a preset temperature. In the accumulating, the activated plating liquid is accumulated on a substrate W. In the forming of the plating film, the plating film is formed on the substrate by electroless plating while heating the substrate on which the plating liquid is accumulated. In the performing of the post-processing, the post-processing is performed on the substrate on which the plating film is formed. In the drying, the substrate after being subjected to the post-processing is dried. Activating the plating liquid for the substrate to be processed next is performed in parallel with the forming of the plating film, the performing of the post-processing, and the drying upon the substrate being processed currently.