A substrate liquid processing method includes holding a substrate W with a substrate holder 52; supplying a plating liquid L1 onto a top surface of the substrate; covering the substrate with a cover body 6 disposed above the held substrate, the cover body having a ceiling portion 61; and heating the plating liquid on the substrate by a heating unit 63 provided in either one of at least the cover body and the substrate holder in a state that the substrate is covered with the cover body. A gas exhausting operation of pushing out a reaction gas staying between the cover body and the substrate by moving either one of at least the cover body and the substrate holder vertically is performed in the heating of the plating liquid.

A modified resin base material that includes a resin material having a base at a surface thereof, and a plating catalytic metal on the surface of the resin material, wherein a combination of the plating catalytic metal and the base is at least one of the following Lewis acid-base combinations according to a HSAB principle: a hard acid and a hard base or an intermediate base, an intermediate acid and a hard base, an intermediate base or a soft base, or a soft acid and an intermediate base or a soft base.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

Systems and methods for electroless plating a first metal onto a second metal in a molten salt bath including: a bath vessel holding a dry salt mixture including a dry salt medium and a dry salt medium of the first metal, and without the reductant therein, the dry salt mixture configured to be heated to form a molten salt bath; and the second metal is configured to be disposed in the molten salt bath and receive a pure coating of the first metal thereon by electroless plating in the molten salt bath, wherein the second metal is more electronegative than the first metal.

A metal material comprising: a base material; an oxide layer disposed on a surface of the base material; and a metal layer disposed on a surface of the oxide layer, wherein the base material includes aluminum, the oxide layer includes aluminum, nickel, and oxygen, the metal layer includes nickel, and an average thickness of the oxide layer is no less than 50 nm and no more than 250 nm.

An electroless semiconductor bonding structure, an electroless plating system and an electroless plating method of the same are provided. The electroless semiconductor bonding structure includes a first substrate and a second substrate. The first substrate includes a first metal bonding structure disposed adjacent to a first surface of the first substrate. The second substrate includes a second metal bonding structure disposed adjacent to a second surface of the second substrate. The first metal bonding structure connects to the second metal bonding structure at an interface by electroless bonding and the interface is substantially void free.

A copper-coated palladium-containing particle dispersion in which copper-coated palladium-containing particles, which are obtained by coating surfaces of palladium-containing particles with copper, are dispersed is prepared, a platinum ion-containing solution is prepared, and a shell is formed by mixing the copper-coated palladium-containing particle dispersion and the platinum ion-containing solution with each other in a microreactor to displace copper of the copper-coated palladium-containing particle surfaces with platinum. The microreactor includes at least a first supply flow path, a second supply flow path, a joint portion in which the first supply flow path and the second supply flow path are joined to each other, and a discharge flow path. An orifice portion is provided midway in the discharge flow path. A pressure applied to the orifice portion in the displacement step is 2 MPa or higher.

Method for metallising a porous structure made of carbon material, the method comprising the following steps: supplying a porous structure made of carbon material, immersing the porous structure in a solution comprising an ionic liquid, formed by a cation and an anion, and a metal precursor, placing the porous structure in a vacuum, immersed in the solution, in such a way as to cause the solution to penetrate into the porosity of the porous structure, adding a hydrogenated reducing agent, in such a way as to metallise the porous structure to within the porosity of the porous structure.

Provided is a method for forming a metal film capable of forming a homogeneous metal film having a uniform film thickness by stably ensuring a fluid pressure of an electrolytic solution during film formation. The method places a substrate on a mount base. While sucking a gas between the substrate and a porous film through which the electrolytic solution can pass from a suction port of a suction passage formed on the mount base, the method brings the porous film into contact with the surface of the substrate. The method interrupts the suction passage while the porous film contacts the surface of the substrate. While interrupting the suction passage, the method allows the electrolytic solution to pass through the porous film while pressing the porous film against the surface of the substrate with a fluid pressure of the electrolytic solution and deposits metal from metal ions in the passed electrolytic solution on the surface of the substrate, thereby forming the metal film.