An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.

An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

A metal-plated carbon material includes: a carbon material; and a metal layer covering a surface of the carbon material, in which, in the metal layer, crystal grains forming the metal layer have an average crystal grain size of 110 nm or less. A method of manufacturing a metal-plated carbon material, includes: a metal complex fixation step of immersing a carbon material in a supercritical fluid or subcritical fluid containing an organometallic complex of a first metal; and a first energization deposition step of energizing the metal-complex-fixed carbon material in an electroless plating solution containing a second metal.

A metal-plated carbon material includes: a carbon material; and a metal layer covering a surface of the carbon material, in which, in the metal layer, crystal grains forming the metal layer have an average crystal grain size of 110 nm or less. A method of manufacturing a metal-plated carbon material, includes: a metal complex fixation step of immersing a carbon material in a supercritical fluid or subcritical fluid containing an organometallic complex of a first metal; and a first energization deposition step of energizing the metal-complex-fixed carbon material in an electroless plating solution containing a second metal.

Methods of enhancing the corrosion resistance of an oxidizable material exposed to a supercritical fluid is disclosed One method includes placing a surface layer on an oxidizable material, and choosing a buffered supercritical fluid containing a reducing agent with the composition of the buffered supercritical fluid containing the reducing agent chosen to avoid the corrosion of the surface layer or reduce the rate of corrosion of the surface layer and avoid the corrosion of the oxidizable material or reduce the rate of corrosion of the oxidizable material at a temperature above the supercritical temperature and supercritical pressure of the supercritical fluid.

A substrate processing method using a supercritical fluid is provided that can deposit a conformal film in a trench with a high aspect ratio and allows complete filling without voids. The substrate processing method comprises supplying a first process fluid containing a precursor and a first supercritical fluid to a reactor to raise a pressure of the reactor to a first pressure equal to or greater than a critical pressure, subsequently, first venting the reactor to lower the pressure in the reactor to a second pressure, subsequently, supplying a second process fluid containing a reducing fluid to the reactor to raise the pressure in the reactor to a third pressure, subsequently, second venting the reactor to lower the pressure in the reactor to a fourth pressure.

An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

Methods of enhancing the corrosion resistance of an oxidizable material exposed to a supercritical fluid is disclosed One method includes placing a surface layer on an oxidizable material, and choosing a buffered supercritical fluid containing a reducing agent with the composition of the buffered supercritical fluid containing the reducing agent chosen to avoid the corrosion of the surface layer or reduce the rate of corrosion of the surface layer and avoid the corrosion of the oxidizable material or reduce the rate of corrosion of the oxidizable material at a temperature above the supercritical temperature and supercritical pressure of the supercritical fluid.

An apparatus for fabricating a semiconductor device includes a chamber accommodating a substrate coated with a first fluid, a lower inlet which is placed in a lower wall of the chamber and providing a first supercritical fluid into the chamber, an upper inlet placed in an upper wall of the chamber and providing a second supercritical fluid into the chamber, a fluid outlet placed in the lower wall of the chamber and discharging a second fluid which is a mixture of the first fluid and the first supercritical fluid to outside of the chamber, and a drain cup placed between the lower wall of the chamber and the substrate, and having a first portion of which a width, in a horizontal direction, decreases toward the lower wall of the chamber, and a second portion which connects the first portion and the fluid outlet to each other.

An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.