A graphene reinforced aluminum matrix composite with high electrical conductivity and a preparation method thereof. The method includes: obtaining aluminum coated graphene powder by plating aluminum on a graphene surface, melting aluminum block into aluminum liquid, heating a mold to be lower than an aluminum melting point, alternately pouring the aluminum liquid and the aluminum coated graphene powder into the mold for layered casting to obtain a sandwich structure; extruding the sandwich structure into a rectangular test block and then heating to 500˜600° C., performing heat preservation for a preset time and performing forging treatment, and performing longitudinal cold deformation under inert gas to obtain the graphene reinforced aluminum matrix composite. The method can solve a problem that poor wettability of graphene and aluminum matrix, the graphene is evenly dispersed in the aluminum matrix, which can improve strength of the aluminum matrix and keep its high electrical conductivity.

Compositions for electroless plating baths and their use are disclosed, and more particularly different solutions each usable to both makeup an original bath and to replenishment of the original bath.

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

A chamber includes a sidewall, a cooling pipe, and an external pipe. The cooling pipe includes a first segment extending along the sidewall of the chamber, and includes multiple purge nozzles. The external pipe extends to inside the chamber and is connected to the first segment of the cooling pipe. A semiconductor processing station includes a central transfer chamber, a load lock chamber, and a cooling stage. The load lock chamber and the cooling stage are disposed adjacent to the central transfer chamber. The load lock chamber is adapted to contain a wafer carrier having multiple wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer between the cooling stage and the load lock chamber. A semiconductor process using the semiconductor processing station is also provided.

It is provided a method for manufacturing a metal coated substrate by forming a metal coating on a surface of a substrate, comprising: immersing the substrate in a palladium/tin colloidal solution; immersing the substrate in an acid solution; carrying out electroless metal plating in order to obtain a continuous film-coated substrate, and subjecting the metal coating to a cryogenic treatment step in order to make it permeable to electromagnetic waves, the cryogenic treatment step being carried out by cooling the substrate with liquid nitrogen. It is also provided a metal coated substrate obtainable by the mentioned method and an article of manufacture made of the metal coated substrate.

A graphene reinforced aluminum matrix composite with high electrical conductivity and a preparation method thereof. The method includes: obtaining aluminum coated graphene powder by plating aluminum on a graphene surface, melting aluminum block into aluminum liquid, heating a mold to be lower than an aluminum melting point, alternately pouring the aluminum liquid and the aluminum coated graphene powder into the mold for layered casting to obtain a sandwich structure; extruding the sandwich structure into a rectangular test block and then heating to 500˜600° C., performing heat preservation for a preset time and performing forging treatment, and performing longitudinal cold deformation under inert gas to obtain the graphene reinforced aluminum matrix composite. The method can solve a problem that poor wettability of graphene and aluminum matrix, the graphene is evenly dispersed in the aluminum matrix, which can improve strength of the aluminum matrix and keep its high electrical conductivity.

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

A semiconductor processing station includes first and second chambers, and a cooling stage. The second chamber includes a cooling pipe disposed inside the second chamber, and an external pipe. The cooling pipe includes a first segment disposed along a sidewall of the second chamber, and a second segment disposed perpendicular to the first segment and located above a wafer carrier in the second chamber. An end of the second segment is connected to an end of the first segment. The external pipe is connected to the second segment distal from the end of the second segment to provide a fluid to flow through the cooling pipe from an exterior to an interior of the second chamber. The fluid discharges toward the wafer carrier through the first segment. The first chamber is surrounded by the second chamber and the cooling stage, and communicates between the cooling stage and the second chamber.

A semiconductor processing station including a central transfer chamber, a load lock chamber disposed adjacent to the central transfer chamber, and a cooling stage disposed adjacent to the load lock chamber and the central transfer chamber is provided. The load lock chamber is adapted to contain a wafer carrier including a plurality of wafers. The central transfer chamber communicates between the cooling stage and the load lock chamber to transfer a wafer of the plurality of wafers between the cooling stage and the load lock chamber.

A deposition method relating to semiconductor technology is presented. The deposition method includes: conducting a first deposition in a reaction chamber at a first deposition temperature; conducting a cool-down process on the reaction chamber, and conducting a second deposition during the cool-down process. In the first deposition, the thin-films deposited on the periphery of a wafer are thicker than those deposited on the center of a wafer, while in the second deposition, the thin-films deposited on the periphery of a wafer are thinner that those deposited on the center of a wafer. Therefore the thin-films deposited by this deposition method are more homogeneous in thickness that those deposited with conventional methods.