A process comprising: (i) coating particles of silicon carbide, silicon nitride, boron carbide or boron nitride with a metal alloy or metal layer; (ii) agglomerating the particles of step (i); thermally spraying the agglomerated metal or metal alloy coated particles onto a substrate to provide a coating thereon.

Disclosed are an anode active material for lithium secondary batteries, the anode active material comprising: a core part including a carbon-silicon complex and having a cavity therein; and a coated layer which is formed on the surface of the core part and includes a phosphor-based alloy.

A catalyst layer can be uniformly formed on an entire surface of a substrate and an entire inner surface of a recess. A catalyst layer forming method of forming the catalyst layer on the substrate includes a first supply processing of forming a substrate surface catalyst layer 22A by supplying a catalyst liquid on the entire surface of the substrate 2; and a second supply processing of forming a recess inner surface catalyst layer 22B by supplying the catalyst liquid to a central portion of the substrate 2 while rotating the substrate 2.

A laminate including a metallic base material, a nickel-containing plating film layer formed on the metallic base material, and a gold plating film layer formed on the nickel-containing plating film layer, in which pinholes in the gold plating film layer are sealed with a fluorinated passive film having a thickness of 8 nm or greater. Also disclosed is a constituent member of a semiconductor production device including the laminate and a method for producing the laminate.

A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

A base material for a printed circuit board includes: an insulating base film; a sintered layer that is layered on at least one side surface of the base film and that is formed of a plurality of sintered metal particles; an electroless plating layer that is layered on a surface of the sintered layer that is opposite to the base film; and an electroplating layer that is layered on a surface of the electroless plating layer that is opposite to the sintered layer, wherein an arithmetic mean height Sa of the surface of the electroless plating layer opposite to the sintered layer is greater than or equal to 0.001 m and less than or equal to 0.5 m.

A base material for a printed circuit board includes: an insulating base film; a sintered layer that is layered on at least one side surface of the base film and that is formed of a plurality of sintered metal particles; an electroless plating layer that is layered on a surface of the sintered layer that is opposite to the base film; and an electroplating layer that is layered on a surface of the electroless plating layer that is opposite to the sintered layer, wherein an arithmetic mean height Sa of the surface of the electroless plating layer opposite to the sintered layer is greater than or equal to 0.001 m and less than or equal to 0.5 m.

According to one aspect of the present disclosure, a base material for a printed circuit board includes: an insulating base film; a sintered body layer that is layered on at least one surface of the base film and that is formed of a plurality of sintered metal particles; and an electroless plating layer that is layered on a surface of the sintered body layer that is opposite to the base film, wherein an area rate of sintered bodies of the metal particles in a cross section of the sintered body layer is greater than or equal to 50% and less than or equal to 90%.