The present disclosure is drawn to covers for electronic devices. In one example, a cover for an electronic device can include a substrate having an opening therethrough, or an outer edge, or both. A thermoplastic insert molding can include a metal oxide dopant, the thermoplastic insert molding positioned on the substrate. A paint coating can be included on the thermoplastic insert molding. A chamfered edge can be present on the substrate at a location that defines the opening, the outer edge, or both, wherein the chamfered edge cuts through the paint coating and partially through the thermoplastic insert molding to expose a portion of the metal oxide dopant at the chamfered edge. A metal layer can be formed using laser direct structuring masking a portion of the metal oxide dopant exposed at the chamfered edge. A second metal layer can be formed over the metal layer.

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y, X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y, X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

There is provided a technique capable of forming a plating film excellent in film thickness and quality uniformity on a to-be-plated surface of a semiconductor wafer while suppressing an increase in costs of facilities. An apparatus for manufacturing a semiconductor device includes: a reaction bath; a supply pipe provided inside the reaction bath and including a plurality of ejection holes for ejecting the reaction solution, the ejecting holes being arranged in a longitudinal direction of the supply pipe; and an outer bath serving as a reservoir bath provided adjacent to the reaction bath on a first end side of the supply pipe and storing therein the reaction solution overflowed the reaction bath. The aperture ratio of part of the ejection holes more distant from the outer bath is at least partially higher than that of part of the ejection holes closer to the outer bath.

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5-y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

The invention relates to selective deposition of a nickel layer on a copper surface. The invention may be used in the production of electrically conductive areas for electronic circuits. Method for nickel deposition on the surface of copper comprises immersing an item, which surface is to be deposited with the nickel layer, into one or more baths, of which at least one contains a reducing agent and of which at least one is adapted for (electroless) plating of nickel. In order to extend the field of application and to obtain practically pure nickel coatings, said reducing agent comprises boronic or phosphoric compounds, comprising morpholine borane (C.sub.4H.sub.9BNO), or dimethylamine borane (C.sub.2H.sub.7BN), or sodium tetrahydroborate (NaBH.sub.4), or sodium hypophosphite (NaH.sub.2PO.sub.2) and said reducing agent directly or indirectly reduces insoluble copper (I) or copper (II) compounds on the copper surface. At least one of the mention baths comprises a ligand or mixture thereof.

Methods for electropolishing and coating aluminum on a surface of an air and/or moisture sensitive substrate, including: in a vessel, submerging the substrate in a first molten salt bath and applying an anodizing current to the substrate at a first temperature to electropolish the surface of the substrate; wherein the first molten salt bath includes one of a first organic salt bath and first inorganic salt bath; wherein, when used, the first organic salt bath includes one of (a) aluminum halide and ionic liquid, (b) a combination of an aluminum halide and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5−y,X.sub.y)SO.sub.2CX.sub.3, where y is a number from 0-5), (c) a combination of an aluminum halide, an ionic liquid, and halogenatedmethylphenylsulfone (C.sub.6(H.sub.5−y,X.sub.y)SO.sub.2CX.sub.3), and (d) AlF.sub.3-organofluoride-hydrofluoric acid adduct; wherein, when used, the first inorganic salt bath includes aluminum halide and alkali metal halide; and wherein the anodizing current is 10-30 mA/cm.sup.2.

The present invention describes a composition and method to control dimensional growth during an anodizing process. Potassium permanganate has been discovered, when added to an anodizing solution containing at least one acid, to minimize dimensional change. This novel composition and method were found to be safer, quicker and less expensive than the conventional method of anodizing aluminum. In addition, the novel composition and method were found to have superior properties to aluminum anodized by the conventional method with respect to durability and corrosion resistance. In addition to anodizing, the novel solution described herein is capable of several other uses including the removal of organic and metal contaminants from solution, producing black electroless nickel on a substrate, producing a bright nickel coating on a substrate such as aluminum, and cleaning and activating aluminum for plating.

A process of enhancing surface adhesion of polyetherimides for metal plating includes contacting sulfuric acid with a surface of a polyetherimide substrate for a first dwell time to form a pre-etched polyetherimide substrate, contacting the pre-etched polyetherimide substrate with a mixture of sulfuric acid and periodate ions for a dwell time to form an oxidized polyetherimide surface, contacting the oxidized polyetherimide surface with an alkaline metal hydroxide solution for a third dwell time without rinsing between the applying steps or between the applying and contacting steps, where the polyetherimide is free of or includes a low volume percentage of reinforcement particles, and the process does not include contacting the polyetherimide substrate with nitric acid in any step.

The present invention describes a composition and method to control dimensional growth during an anodizing process. Potassium permanganate has been discovered, when added to an anodizing solution containing at least one acid, to minimize dimensional change. This novel composition and method were found to be safer, quicker and less expensive than the conventional method of anodizing aluminum. In addition, the novel composition and method were found to have superior properties to aluminum anodized by the conventional method with respect to durability and corrosion resistance. In addition to anodizing, the novel solution described herein is capable of several other uses including the removal of organic and metal contaminants from solution, producing black electroless nickel on a substrate, producing a bright nickel coating on a substrate such as aluminum, and cleaning and activating aluminum for plating.