A surface treatment for a metal substrate includes a nitride layer and a diamond-like carbon coating on said nitride layer. The metal substrate can be a titanium-containing substrate. The nitride layer and diamond-like carbon coating serve to improve the tribological properties of the metal substrate.

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Some embodiments include a method of forming a conductive structure. A metal-containing conductive material is formed over a supporting substrate. A surface of the metal-containing conductive material is exposed to at least one radical form of hydrogen and to at least one oxidant. The exposure alters at least a portion of the metal-containing conductive material to thereby form at least a portion of the conductive structure. Some embodiments include a conductive structure which has a metal-containing conductive material with a first region adjacent to a second region. The first region has a greater concentration of one or both of fluorine and boron relative to the second region.

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

Disclosed are a processing method for fluorination of a fluorination-target component for semiconductor fabrication equipment, which may realize high density and high strength by fluorinating the fluorination-target component using a fluorinating gas excited into plasma, and at the same time, may significantly reduce plasma contaminant particles which are generated during formation of a fluoride coating, and a fluorinated component obtained by the method.

The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

A method for producing a sintered component, in particular an annular sintered component, with a toothing, having teeth with tooth roots, tooth tips and tooth flanks, includes the steps of pressing a powder to form a green compact, sintering the green compact, and hardening the sintered component, wherein after sintering, the tooth flanks and possibly the tooth tips are post-compacted and subsequently undergo post-processing by machining, and wherein a transition region between the tooth flanks and the tooth roots has an undercut design, and post-compaction of the tooth flanks is carried out only up to this transition region.

Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

Metal components subject to wear or contact fatigue in a first area, and subject to bending, axial and/or torsional stress loading in a second area comprise a surface hardened, first surface layer in the first area, and a surface compressive-stress treated, second surface layer in the second area. The second surface layer has a material hardness different from, and typically lower than, the first surface layer, and induced residual compressive stress to improve fatigue strength. Example components described include a gear, a cog, a pinion, a rack, a splined shaft, a splined coupling, a torqueing tool and a nut driving tool. A hybrid manufacturing process is described, including area-selective surface hardening combined with a process to add compressive stress to fatigue failure prone areas.

A hybrid method of surface hardening metallic components using a combination of chemical modification achieved through additive manufacturing and/or diffusion-based processing with transformation-based processing using a high energy density heat source. The hybrid process results in increased surface hardness and/or increased average case hardness and/or increased case depth compared to either treatment individually.