A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.

A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.

The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

A method for the dry removal of a material on a microelectronic workpiece is described. The method includes receiving a substrate having a working surface exposing a metal layer and having at least one other material exposed or underneath the metal layer; and differentially etching the metal layer relative to the other material by exposing the substrate to a controlled gas-phase environment containing an anhydrous halogen compound.

An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

The invention relates to a method for pickling a turbomachine component (1), comprising the following steps: positioning the component in a closed chamber (2), injecting a gas mixture (3) into the chamber (2), the gas mixture (3) comprising a halogenated gas, heating the chamber (2), the method being characterised in that: the gas mixture further comprises dihydrogen, the heating step is carried out at a temperature higher than 1000° C. and the step of injecting the gas mixture (3) is carried out by circulating through the chamber (2) a flow of gas mixture (3) having a flow rate between 6 and 15 times the volume of the chamber (2) per hour.

Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.

Disclosed herein is a method for forming metal-oxides in the photoresist to improve profile control. The method includes infiltrating a metal oxide in a photoresist layer by pressurizing a methyl-containing material in a processing environment proximate a film stack. The film stack includes the photoresist layer, the photoresist layer being disposed on top of and in contact with an underlayer. The underlayer disposed on top of a substrate. The method includes etching the film stack including the photoresist layer implanted with the metal oxide.

A cleaning method for a by-product including a refractory material or a metal compound includes a reforming process and an etching process. In the reforming process, a surface of the by-product is reformed using nitrogen-containing gas and hydrogen-containing gas. In the etching process, the reformed surface is etched using halogen-containing gas and inert gas.