A method of generating artificial latent fingerprints for latent fingerprint development experiments includes: printing an artificially created fingerprint shape on paper for application to a target surface; thermally transferring the fingerprint shape printed on the paper to an etching plate by applying a certain range of heat and pressure to the paper on which the fingerprint shape is printed; forming a three-dimensional fingerprint shape on the etching plate by performing an etching process according to the fingerprint shape transferred to the etching plate; patterning the three-dimensional fingerprint shape formed on the etching plate with a molding member; and forming a latent fingerprint on the target surface using an artificial fingerprint solution from the three-dimensional fingerprint shape formed by patterning with the molding member.

The present invention relates to an eco-friendly and simple super-hydrophobic coating method that does not use harmful substances and special equipment. Coating according to the present invention may be performed as a single process without special equipment, and because only eco-friendly materials are used, the coating material may be easily used and discarded. In addition, even a three-dimensional pipe or a heat-exchanger having a complex shape may be modified to have super-hydrophobicity by applying the present coating, and a super-hydrophobic metal filter may be manufactured and used for oil-water separation. As a result, the present coating method is eco-friendly, simple, and applicable to various substrates, so it has great potential for application in various industries.

The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO.sub.4.sup.2−, NO.sub.3.sup.−, PO.sub.4.sup.3−, and BO.sub.3.sup.3−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

This application provides a metal foil. The metal foil may include a first metal layer and a metal base layer that are stacked up. A roughness Rz of a surface that is of the metal base layer and that is oriented toward the first metal layer is α.sub.1 μm, a roughness Rz of a surface that is of the first metal layer and that is oriented back from the metal base layer is β.sub.1 μm, α.sub.1 may be in a range of 1.8 to 2.9, and β.sub.1 may be in a range of 1 to 1.4.

Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

Methods and composition sets for forming etch-resist masks on a metallic surface are provided. The method may include depositing a first aqueous composition comprising a first reactive component onto a metallic layer of a substrate; depositing a second aqueous composition comprising a second reactive component on selected portions of the deposited first aqueous composition to form, from a chemical reaction between the first reactive component and the second reactive component, a bi-component material mask in a pattern to protect selected regions of the metallic layer; and depositing an etch solution to remove the metallic layer in regions not protected by the bi-component material mask.

An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

Crystal plane orientation enrichment compounds are applied to copper to modify copper grain orientation distribution to the favorable crystal plain orientation to enhance copper electroplating. Electroplating copper on the modified copper enables faster and selective electroplating.