This disclosure provides systems, methods, and apparatus related to graphene. In one aspect, a method includes submerging a frame support in an etching solution that is contained in a container. A growth substrate, a graphene sheet disposed on the growth substrate, and a primary support disposed on the graphene sheet is placed on a surface of the etching solution. The growth substrate is dissolved in the etching solution to leave the graphene sheet and the primary support floating on a surface of the etching solution. The etching solution in the container is replaced with a washing solution. The washing solution is removed from the container so that the graphene sheet becomes disposed on the frame support.

This disclosure provides systems, methods, and apparatus related to graphene. In one aspect, a method includes submerging a frame support in an etching solution that is contained in a container. A growth substrate, a graphene sheet disposed on the growth substrate, and a primary support disposed on the graphene sheet is placed on a surface of the etching solution. The growth substrate is dissolved in the etching solution to leave the graphene sheet and the primary support floating on a surface of the etching solution. The etching solution in the container is replaced with a washing solution. The washing solution is removed from the container so that the graphene sheet becomes disposed on the frame support.

A copper etching solution contains an oxidizing agent and an amine compound. The oxidizing agent is one or more selected from the group consisting of a perchlorate, a chlorate, a chlorite, a hypochlorite, hydrogen peroxide, and a perborate, and the amine compound has one or more primary amino groups or secondary amino groups.

A copper etching solution contains an oxidizing agent and an amine compound. The oxidizing agent is one or more selected from the group consisting of a perchlorate, a chlorate, a chlorite, a hypochlorite, hydrogen peroxide, and a perborate, and the amine compound has one or more primary amino groups or secondary amino groups.

A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.

An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

An etchant composition for etching a triple layer metal wiring structure of molybdenum/copper/molybdenum or molybdenum alloy/copper/molybdenum alloy, and a use thereof are disclosed. The etchant composition includes hydrogen peroxide, glycol, an etching inhibitor, a chelating agent, an etching additive, a pH adjuster, and water, The etchant can not only slow down the decomposition of hydrogen peroxide, but also extend the lifespan of the etchant, thereby greatly reducing the costs of the etchant in the manufacturing process, and improving the safety factor of the etchant.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

The present invention discloses an etchant and an etching method for a copper-molybdenum film layer. The etchant includes a main etchant, and the main etchant includes hydrogen peroxide, a chelating agent, a first inorganic acid, and water. A mass percentage of the chelating agent in the main etchant is in a range of 2% to 10%, a mass percentage of the first inorganic acid in the main etchant is in a range of 1% to 10%, and a mass percentage of the hydrogen peroxide in the main etchant is in a range of 4% to 10%.

A method of generating artificial latent fingerprints for latent fingerprint development experiments includes: printing an artificially created fingerprint shape on paper for application to a target surface; thermally transferring the fingerprint shape printed on the paper to an etching plate by applying a certain range of heat and pressure to the paper on which the fingerprint shape is printed; forming a three-dimensional fingerprint shape on the etching plate by performing an etching process according to the fingerprint shape transferred to the etching plate; patterning the three-dimensional fingerprint shape formed on the etching plate with a molding member; and forming a latent fingerprint on the target surface using an artificial fingerprint solution from the three-dimensional fingerprint shape formed by patterning with the molding member.