Patent classifications
C23F1/30
COMPOSITION AND METHOD FOR TREATING SUBSTRATE
The present invention provides a composition having an excellent dissolving ability for a transition metal-containing substance and a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof and a compound represented by Formula (1), in which a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition.
##STR00001##
ETCHING COMPOSITION FOR THIN FILM CONTAINING SILVER, METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING A DISPLAY DEVICE USING THE SAME
An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.
Modified surface for condensation
The present invention relates to a method of enhancing heat transfer of metallic surfaces by (1) fabricating hierarchical micro-nanostructured surfaces using etching processes, and (2) fabricating hydrophobic and hydrophilic regions, using a printing or a coating technique, followed by etching. The said method enhances the density of condensation sites over a metallic surface and additionally facilitates the departure of condensed droplets from the surface. Such a surface also enhances the sensible heat transfer characteristics, and improves the coefficient of performance (COP) of refrigeration systems for applications like atmospheric water generators, dehumidifiers, air conditioners, etc.
Modified surface for condensation
The present invention relates to a method of enhancing heat transfer of metallic surfaces by (1) fabricating hierarchical micro-nanostructured surfaces using etching processes, and (2) fabricating hydrophobic and hydrophilic regions, using a printing or a coating technique, followed by etching. The said method enhances the density of condensation sites over a metallic surface and additionally facilitates the departure of condensed droplets from the surface. Such a surface also enhances the sensible heat transfer characteristics, and improves the coefficient of performance (COP) of refrigeration systems for applications like atmospheric water generators, dehumidifiers, air conditioners, etc.
Glass wiring board
A glass wiring board that can be kept from cracking by better preventing concentration of stresses in a glass plate on which a conductor layer including an electrolytic copper plating layer is provided, the wiring board includes: a glass plate; a first metal layer covering at least a part of the glass plate; and a second metal layer covering at least a part of the first metal layer, and the area of the first metal layer in contact with the second metal layer is smaller than the area of the second metal layer facing the first metal layer.
Chemical solution and method for treating substrate
The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO.sub.4.sup.2−, NO.sub.3.sup.−, PO.sub.4.sup.3−, and BO.sub.3.sup.3−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.
METHODS FOR WET ETCHING OF NOBLE METALS
The present disclosure provides improved wet etch processes and methods for etching noble metals. More specifically, the present disclosure provides various embodiments of wet etch processes and methods that utilize new etch chemistries for etching noble metals, such as ruthenium (Ru), gold (Au), platinum (Pt) and iridium (Ir), in a wet etch process. In general, the disclosed embodiments expose a noble metal surface to a first etch solution to chemically modify the noble metal surface and form a noble metal salt passivation layer, which can then be selectively dissolved in a second etch solution to etch the noble metal surface.
METHODS FOR WET ETCHING OF NOBLE METALS
The present disclosure provides improved wet etch processes and methods for etching noble metals. More specifically, the present disclosure provides various embodiments of wet etch processes and methods that utilize new etch chemistries for etching noble metals, such as ruthenium (Ru), gold (Au), platinum (Pt) and iridium (Ir), in a wet etch process. In general, the disclosed embodiments expose a noble metal surface to a first etch solution to chemically modify the noble metal surface and form a noble metal salt passivation layer, which can then be selectively dissolved in a second etch solution to etch the noble metal surface.
Methods For Wet Atomic Layer Etching Of Ruthenium
The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.
Methods For Wet Atomic Layer Etching Of Ruthenium
The present disclosure provides a new wet atomic layer etch (ALE) process for etching ruthenium. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching ruthenium in a wet ALE process. Unlike conventional etch processes for ruthenium, the wet ALE process described herein for etching ruthenium is metal-free, cost-effective and improves surface roughness during etching.